AP9997GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Charge
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
120mΩ
11A
S
Description
AP9997 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP9997GJ) are available for low-profile
applications.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Total Power Dissipation
3
Storage Temperature Range
Operating Junction Temperature Range
.
Rating
100
+20
11
7
30
34.7
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
3.6
62.5
110
Units
℃/W
℃/W
℃/W
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1
201411053
AP9997GH/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=8A
V
GS
=4.5V, I
D
=3A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=8A
V
DS
=80V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=10A
V
DS
=80V
V
GS
=10V
V
DS
=50V
I
D
=10A
R
G
=3.3Ω,V
GS
=10V
R
D
=5Ω
V
GS
=0V
V
DS
=25V
Min.
100
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
7.3
-
-
13
2.2
6
5
17
15
4.4
450
65
50
Max. Units
-
120
200
3
-
25
+100
21
-
-
-
-
-
-
720
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
.
f=1.0MHz
Test Conditions
I
S
=8A, V
GS
=0V
I
S
=10A, V
GS
=0V
dI/dt=100A/µs
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Min.
-
-
-
Typ.
-
41
73
Max. Units
1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9997GH/J-HF
20
20
T
C
= 25 C
16
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10 V
7 .0 V
5.0 V
4.5 V
T
C
= 150
o
C
16
10 V
7 .0 V
5.0 V
4.5 V
12
12
8
8
4
V
G
= 3 .0V
4
V
G
= 3.0 V
0
0
1
2
3
4
5
0
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
150
2.4
I
D
=8A
140
T
C
=25 C
2.0
o
I
D
=8A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
130
1.6
120
.
1.2
110
0.8
100
90
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
8
1.2
I
S
(A)
6
T
j
=150 C
4
o
T
j
=25 C
o
Normalized V
GS(th)
0.8
0.4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9997GH/J-HF
12
1000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
10
C
iss
8
C (pF)
I
D
= 10 A
V
DS
= 80 V
6
100
C
oss
4
C
rss
2
0
0
4
8
12
16
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
Operation in this
area limited by
R
DS(ON)
10
0.2
I
D
(A)
100us
0.1
.
1
0.1
0.05
P
DM
0.02
T
c
=25
o
C
Single Pulse
0.1
0.1
1
10
100
1ms
10ms
100ms
DC
1000
t
T
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP9997GH/J-HF
MARKING INFORMATION
TO-251
9997GJ
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
9997GH
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
.
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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