AP9997GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Charge
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
120mΩ
11A
S
Description
AP9997 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance
and low package cost contribute to the worldwide popular
package.
G
D
TO-220(P)
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
.
Rating
100
+20
11
7
30
34.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Value
3.6
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
201509104
AP9997GP-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=8A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=8A
V
DS
=80V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=10A
V
DS
=80V
V
GS
=10V
V
DS
=50V
I
D
=10A
R
G
=3.3Ω,V
GS
=10V
R
D
=5Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
100
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
7.3
-
-
-
13
2.2
6
5
17
15
4.4
450
65
50
Max. Units
-
120
3
-
25
100
+100
21
-
-
-
-
-
-
720
-
-
V
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=80V ,V
GS
=0V
.
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Test Conditions
I
S
=10A, V
GS
=0V
I
S
=10A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
41
73
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9997GP-HF
20
20
T
C
= 25 C
16
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10 V
7 .0 V
5.0 V
4.5 V
T
C
= 150
o
C
16
10 V
7 .0 V
5.0 V
4.5 V
12
12
8
8
4
V
G
= 3 .0V
4
V
G
= 3.0 V
0
0
1
2
3
4
5
0
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
150
2.4
I
D
=8A
140
T
C
=25 C
2.0
o
I
D
=8A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
130
1.6
120
.
1.2
110
0.8
100
90
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
8
1.2
I
S
(A)
6
T
j
=150 C
4
o
T
j
=25 C
o
Normalized V
GS(th)
0.8
0.4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9997GP-HF
12
1000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
10
C
iss
8
C (pF)
I
D
= 10 A
V
DS
= 80 V
6
100
C
oss
4
C
rss
2
0
0
4
8
12
16
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
10
0.2
I
D
(A)
100us
0.1
.
1
0.1
0.05
P
DM
0.02
T
c
=25
o
C
Single Pulse
0.1
0.1
1
10
1ms
10ms
100ms
DC
100
1000
t
T
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP9997GP-HF
MARKING INFORMATION
9997GP
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5
京公网安备 11010802033920号
EEWORLD
