Power Transistors
2SB1372
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2065
Unit: mm
M
Di ain
sc te
on na
tin nc
ue e/
d
q
q
q
q
16.2±0.5
12.5
3.5
Solder Dip
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
Wide area of safe operation (ASO)
High transition frequency f
T
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
–140
–140
–5
0.7
s
Features
15.0±0.3
11.0±0.2
5.0±0.2
3.2
21.0±0.5
15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1
0.6±0.2
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
P
C
T
j
T
stg
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Pl
ea
s
ht e v
tp is
:// it
pa fo
na llo
so win
ni g
c. U
co R
.jp L a
/s bo
em u
ic t la
on te
/e st
-in in
de for
x. ma
ht t
m ion
l
.
5.45±0.3
1.1±0.1
Ratings
Unit
V
V
V
A
A
10.9±0.5
2
1
3
–12
–7
80
3
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
W
150
°C
°C
–55 to +150
(T
C
=25˚C)
Symbol
Conditions
min
typ
max
–50
–50
Unit
µA
µA
I
CBO
I
EBO
h
FE1
h
FE3
V
BE
V
CB
= –140V, I
E
= 0
V
EB
= –3V, I
C
= 0
V
CE
= –5V, I
C
= –20mA
V
CE
= –5V, I
C
= –1A
V
CE
= –5V, I
C
= –5A
V
CE
= –5V, I
C
= –5A
I
C
= –5A, I
B
= – 0.5A
20
60
20
h
FE2*
200
–1.8
–2.0
15
200
V
V
MHz
pF
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
V
CE(sat)
f
T
C
ob
V
CE
= –5V, I
C
= – 0.5A, f = 1MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
FE2
Rank classification
Q
60 to 120
S
80 to 160
P
100 to 200
Rank
h
FE2
1
Power Transistors
P
C
— Ta
120
–12
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
T
C
=25˚C
–10
I
B
=–300mA
–10
2SB1372
I
C
— V
CE
–12
V
CE
=–5V
I
C
— V
BE
Collector power dissipation P
C
(W)
100
Collector current I
C
(A)
Collector current I
C
(A)
–200mA
–8
–100mA
–6
–50mA
25˚C
–8
T
C
=–25˚C
100˚C
80
(1)
60
–6
M
Di ain
sc te
on na
tin nc
ue e/
d
40
–4
–4
–20mA
20
(2)
–2
–2
(3)
–10mA
–10
0
0
0
0
20
40
60
80 100 120 140 160
0
–2
–4
–6
–8
–12
0
–1
–2
–3
–4
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
I
C
/I
B
=10
T
C
=100˚C
– 0.3
– 0.1
– 0.03
25˚C
–25˚C
– 0.01
– 0.1 – 0.3
–1
–3
–10
–30
ea
s
ht e v
tp is
:// it
pa fo
na llo
so win
ni g
c. U
co R
.jp L a
/s bo
em u
ic t la
on te
/e st
-in in
de for
x. ma
ht t
m ion
l
.
h
FE
— I
C
f
T
— I
C
1000
V
CE
=–5V
1000
Forward current transfer ratio h
FE
300
Transition frequency f
T
(MHz)
T
C
=100˚C
25˚C
300
V
CE
=–5V
f=1MHz
T
C
=25˚C
100
100
–25˚C
30
30
10
10
3
3
–100
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
Area of safe operation (ASO)
Non repetitive pulse
T
C
=25˚C
10000
–100
–30
–10
–3
–1
Collector output capacitance C
ob
(pF)
3000
I
E
=0
f=1MHz
T
C
=25˚C
Collector current I
C
(A)
I
CP
I
C
t=10ms
1000
100ms
Pl
300
DC
100
– 0.3
– 0.1
– 0.03
30
10
–1
–3
–10
–30
–100
– 0.01
–1
–3
–10
–30
–100 –300 –1000
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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