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2SA1585SQ

Description
2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size72KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SA1585SQ Overview

2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR

2SA1585SQ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknow
Maximum collector current (IC)2 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceNOT SPECIFIED
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
2SB1424 / 2SA1585S
Transistors
Low V
CE
(
sat
)
Transistor (−20V,
−3A)
2SB1424 / 2SA1585S
Features
1) Low V
CE(sat)
.
V
CE(sat)
=
−0.2V
(Typ.)
(I
C
/I
B
=
−2A
/
−0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2150 / 2SC4115S.
External dimensions
(Unit : mm)
2SB1424
0.5±0.1
4.5
+0.2
−0.1
1.6±0.1
1.5±0.1
2SA1585S
4±0.2
2±0.2
3±0.2
4.0
±0.3
2.5
+0.2
−0.1
(15Min.)
(1)
(2)
(3)
0.4±0.1
1.5±0.1
1.0±0.2
0.4
+0.1
−0.05
0.45
+0.15
−0.05
Structure
Epitaxial planar type
PNP silicon transistor
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
3Min.
5
2.5
+0.4
−0.1
0.5
+0.15
0.45
−0.05
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
(1) (2) (3)
Abbreviated symbol: AE
Denotes h
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
FE
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Limits
−20
−20
−6
−3
−2
−5
0.5
0.4
150
−55
to 150
Unit
V
V
V
A
A(Pulse)
W
2SB1424
Collector current
2SA1585S
Collector power
dissipation
2SB1424
2SA1585S
P
C
Tj
Tstg
Junction temperature
Storage temperature
°C
°C
Single pulse Pw=10ms
Rev.A
1/3

2SA1585SQ Related Products

2SA1585SQ 2SA1585SR
Description 2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR 2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? conform to conform to
Reach Compliance Code unknow unknow
Maximum collector current (IC) 2 A 2 A
Collector-emitter maximum voltage 20 V 20 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 120 180
JESD-30 code R-PSIP-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.4 W 0.4 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface NOT SPECIFIED NOT SPECIFIED
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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