HCS02MS
August 1995
Radiation Hardened
Quad 2-Input NOR Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
Y1 1
A1 2
B1 3
Y2 4
14 VCC
13 Y4
12 B4
11 A4
10 Y3
9 B3
8 A3
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD(Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 10
12
Rads (Si)/s
• Dose Rate Upset >10
10
RAD(Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
A2 5
B2 6
GND 7
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14
TOP VIEW
Y1
A1
B1
Y2
A2
B2
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
VCC
Y4
B4
A4
Y3
B3
A3
Description
The Intersil HCS02MS is a Radiation Hardened Quad 2-Input NOR
Gate. A low on both inputs forces the output to a High state.
The HCS02MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS02MS is supplied in a 14 lead Ceramic Flatpack Package
(K suffix) or a 14 lead SBDIP Package (D suffix).
TRUTH TABLE
INPUTS
OUTPUTS
Bn
L
H
L
H
Yn
H
L
L
L
Ordering Information
PART
NUMBER
HCS02DMSR
TEMPERATURE
RANGE
-55
o
C to +125
o
C
SCREENING
LEVEL
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Sample
PACKAGE
14 Lead SBDIP
An
L
L
H
H
14 Lead Ceramic
Flatpack
14 Lead SBDIP
An
(2, 5, 8, 11)
HCS02KMSR
-55
o
C to +125
o
C
NOTE: L = Logic Level Low, H = Logic level High
HCS02D/
Sample
HCS02K/
Sample
HCS02HMSR
+25
o
C
Functional Diagram
+25
o
C
Sample
14 Lead Ceramic
Flatpack
Die
Bn
Yn
(1, 4, 10, 13)
+25
o
C
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
1
518744
2433.2
DB NA
(3, 6, 9, 12)
Specifications HCS02MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
74
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 116
o
C/W
30
o
C/W
o
C
Maximum Package Power Dissipation at +125
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . .0.0V to 30% of VCC Max.
Input High Voltage (VIH) . . . . . . . . . . . . . . 70% of VCC to VCC Min.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
10
200
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETERS
Quiescent Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
-
µA
µA
-
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) (Note 2)
7, 8A, 8B
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
2
518744
Specifications HCS02MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
Input to Yn
TPLH
VCC = 4.5V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
MAX
18
20
20
22
UNITS
ns
ns
ns
ns
PARAMETER
Input to Yn
SYMBOL
TPHL
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, f = 1MHz
NOTES
1
1
CIN
VCC = 5.0V, f = 1MHz
1
1
Output Transition
Time
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TTHL
TTLH
VCC = 4.5V
1
1
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C
+25
o
C
+125
o
C
MIN
-
-
-
-
-
-
MAX
18
26
10
10
15
22
UNITS
pF
pF
pF
pF
ns
ns
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V or 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD, IOL = 50µA
VCC = 4.5V or 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD, IOH = -50µA
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD, (Note 3)
VCC = 4.5V
VCC = 4.5V
200K RAD LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
4.0
-4.0
-
VCC
-0.1
-
-
2
2
MAX
0.2
-
-
0.1
-
±5
-
20
22
UNITS
mA
mA
mA
V
V
µA
-
ns
ns
PARAMETERS
Quiescent Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage Current
Noise Immunity
Functional Test
Input to Yn
SYMBOL
ICC
IOL
IOH
VOL
VOH
IIN
FN
TPHL
TPLH
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
3
518744
Specifications HCS02MS
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
3µA
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
GROUP A SUBGROUPS
COMFORMANCE GROUP
Initial Test
Interim Test
PDA
Final Test
Group A (Note 1)
Subgroup B5
Subgroup B6
Group D
NOTES:
1. Alternate Group A testing in accordance with MIL-STD-883 Method 5005 may be exercised.
2. Table 5 parameters only.
MIL-STD-883 METHOD
100% 5004
100% 5004
100% 5004
100% 5004
Sample 5005
Sample 5005
Sample 5005
Sample 5005
TESTED
1, 7, 9
1, 7, 9,
∆
1, 7,
∆
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11,
∆
1, 7, 9
1, 7, 9
1, 2, 3,
∆
(Note 2)
RECORDED
1 (Note 2)
1,
∆
(Note 2)
TABLE 7. TOTAL DOSE IRRADIATION
TEST
CONFORMANCE
GROUPS
Group E Subgroup 2
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
METHOD
5005
PRE RAD
1, 7, 9
POST RAD
Table 4
READ AND RECORD
PRE RAD
1, 9
POST RAD
Table 4 (Note 1)
Spec Number
4
518744
Specifications HCS02MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V
±
0.5V
VCC = 6V
±
0.5V
50kHz
25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1)
1, 4, 10, 13
2, 3, 5, 6, 7, 8, 9, 11, 12
-
14
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
1, 4, 10, 13
7
-
2, 3, 5, 6, 8, 9, 11,
12, 14
-
-
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)
-
7
1, 4, 10, 13
14
2, 3, 5, 6, 8, 9,
11, 12
-
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ
±
5% static burn-in.
2. Each Pin except VCC and GND will have a resistor of 1kΩ
±
5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
1, 4, 10, 13
GROUND
7
VCC = 5V
±
0.5V
2, 3, 5, 6, 8, 9, 11, 12, 14
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ
±
5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
5
518744
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