FMM5804X datasheet, PDF - EEWORLD Datasheet

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FMM5804X: DescriptionWide Band Medium Power Amplifier, 17500MHz Min, 31500MHz Max, 2.61 X 1.41 MM, 0.07 MM HEIGHT, HERMETIC SEALED, DIE; CategoryWireless rf/communication Radio frequency and microwave; File Size1MB，4 Pages; ManufacturerSUMITOMO; Websitehttps://global-sei.com/; Environmental Compliance

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FMM5804X Overview

Wide Band Medium Power Amplifier, 17500MHz Min, 31500MHz Max, 2.61 X 1.41 MM, 0.07 MM HEIGHT, HERMETIC SEALED, DIE

FMM5804X Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SUMITOMO
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Characteristic impedance	50 Ω
structure	COMPONENT
Maximum input power (CW)	16 dBm
Maximum operating frequency	31500 MHz
Minimum operating frequency	17500 MHz
Maximum operating temperature	95 °C
Minimum operating temperature	-40 °C
RF/Microwave Device Types	WIDE BAND MEDIUM POWER

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FMM5804X

17.5-31.5GHz Power Amplifier MMIC

FEATURES

• Output Power: (P1dB): 23.0dBm (Typ.)

• High Gain: (G1dB): 18dB (Typ.)

• High PAE:

add = 18% (Typ.)

• Wide Frequency Band: 17.5-31.5 GHz

• Impedance Matched Zin/Zout = 50Ω

• 0.25µm PHEMT Technology

DESCRIPTION

The FMM5804X is a high-gain, wide band 4-stage

MMIC amplifier designed for operation in the 17.5-31.5 GHz

frequency range. This amplifier has an input and output designed for use

in 50Ω systems.This device is well suited for point-to-point, point-to-multi-

point(LMDS) and satellite communication system applications.

Eudyna’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item

Drain Voltage

Gate Voltage

Input Power

Storage Temperature

Channel Temperature

Operating Backside Temperature

Symbol

VDD

VGG

Tstg

Tch

Top

Condition

Rating

-3.0

-65 to +175

175

-40 to +95

Unit

dBm

°C

Eudyna recommends the following conditions for the long term reliable operation of GaAs FETs:

1. The drain-source operating voltage (VDD) should not exceed 6 volts.

2. The forward and reverse gate currents should not exceed 1.0 and -0.08 mA respectively.

3. This product should be hermetically packaged.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)

Item

Frequency Range

Output Power at 1 dB G.C.P.

Power Gain at 1 dB G.C.P.

Drain Current

Power-Added Efficiency

Input Return Loss

Output Return Loss

Symbol

1dB

Iddrf

add

RLi

RLo

VDD = 6V

f = 17.5 ~ 31.5 GHz

*: at f = 17.5-30.0 GHz

**: at f = 30.0-31.5 GHz

IDD

250mA (Typ.)

ZS = ZL = 50Ω

Conditions

Limits

Min. Typ. Max.

17.5-31.5

23*

21**

25*

23**

300

-15

-8

400

Unit

GHz

dBm

Note:

RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)

G.C.P.: Gain Compression Point

Edition 1.5

September 2004

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