2SC5526
Transistors
High-speed Switching Transistor
(60V, 12A)
2SC5526
!Features
1) Low saturation voltage.
(Typ. V
CE(sat)
=
0.15V at I
C
/ I
B
=
6A / 0.3A)
2) High switching speed.
(Typ. tf
=
0.1µs at Ic
=
6A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA2007.
!External
dimensions
(Units: mm)
10.0
4.5
φ
3.2
2.8
15.0
12.0
8.0
5.0
1.2
14.0
1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
0.75
2.6
!Absolute
maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Single pulse,
ROHM : TO-220FN
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25°C)
°C
°C
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
60
5
12
20
2
25
150
−55 ∼ +150
*
Pw=100ms
!Packaging
specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SC5526
TO-220FN
EF
−
500
!Electrical
characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
*
Measured using pulse current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
ton
tstg
tf
Min.
100
60
5
−
−
−
−
−
−
100
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
80
200
−
−
0.1
Max.
−
−
−
10
10
0.3
0.5
1.2
1.5
320
−
−
0.3
1.5
0.3
Unit
V
V
V
µA
µA
V
V
V
V
−
MHz
pF
µs
µs
µs
I
C
=
50µA
I
C
=
1mA
I
E
=
50µA
V
CB
=
100V
V
EB
=
5V
I
C
/I
B
=
6A/0.3A
I
C
/I
B
=
8A/0.4A
I
C
/I
B
=
6A/0.3A
I
C
/I
B
=
8A/0.4A
Conditions
*
*
*
*
*
V
CE
/I
C
=
2V/2A
V
CB
=
10V , I
E
=
1A
, f
=
30MHz
V
CE
=
10V , I
E
=
0A , f
=
1MHz
I
C
=
6A , R
L
=
5
Ω
I
B1
=
−I
B2
=
0.3A
V
CC
30V
stm32/stm8
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