2SC3778-C datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SC3778-C

2SC3778-C: DescriptionUHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, NP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size41KB，5 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

Download Datasheet Parametric Compare View All

2SC3778-C Overview

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, NP, 3 PIN

2SC3778-C Parametric

Parameter Name	Attribute value
Objectid	1484258520
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
Other features	LOW NOISE
Maximum collector current (IC)	0.07 A
Collector-based maximum capacity	1.1 pF
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	5000 MHz

Preview

Download Datasheet

View All

Ordering number:ENN1951B

NPN Epitaxial Planar Silicon Transistor

2SC3778

UHF Low-Noise Amplifier,

Wide-Band Amplifier Applications

Applications

· UHF low-noise amplifiers, wide-band amplifiers.

Package Dimensions

unit:mm

2004B

[2SC3778]

5.0

4.0

Features

· Small noise figure : NF=2.2dB typ (f=0.9GHz).

· High power gain : MAG=14dB typ (f=0.9GHz).

· High cutoff frequency : f

=5.0GHz typ.

0.45

0.5

0.6

2.0

5.0

0.45

0.44

14.0

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

Tstg

Conditions

1.3

1 : Base

2 : Emitter

3 : Collector

SANYO : NP

Ratings

500

150

–55 to +150

Unit

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Reverse Transfer Capacitance

Symbol

ICBO

IEBO

hFE

Cob

Cre

VCB=12V, IE=0

VEB=2V, IC=0

VCE=10V, IC=20mA

VCB=10V, f=1MHz

40*

5.0

0.8

0.5

1.1

Conditions

Ratings

min

typ

max

1.0

200*

GHz

Unit

µA

* : The 2SC3778 is classified by 20mA h

as follows :

Rank

hFE

40 to 80

60 to 120

100 to 200

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62404TN (PC)/N3098HA (KT)/5318MO/5137KI/O185KI, TS No.1951–1/5

2SC3778

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of June, 2004. Specifications and information herein are subject to

change without notice.

PS No.1951–5/5

2SC3778-C Related Products

	2SC3778-C	2SC3778C	2SC3778D	2SC3778-D	2SC3778E	2SC3778-E
Description	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, NP, 3 PIN	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, NP, 3 PIN	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, NP, 3 PIN	RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, NP, 3 PIN	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, NP, 3 PIN	RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, NP, 3 PIN
Objectid	1484258520	1484258520	1484258523	2016189441	1484258526	2016189442
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.07 A	0.07 A	0.07 A	0.07 A	0.07 A	0.07 A
Collector-based maximum capacity	1.1 pF	1.1 pF	1.1 pF	1.1 pF	1.1 pF	1.1 pF
Collector-emitter maximum voltage	12 V	12 V	12 V	12 V	12 V	12 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40	60	60	100	100
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	5000 MHz	5000 MHz	5000 MHz	5000 MHz	5000 MHz	5000 MHz
Parts packaging code	TO-92	TO-92	TO-92	-	TO-92	-
JEDEC-95 code	TO-92	TO-92	TO-92	-	TO-92	-

Recommended Resources

One of the irreversible speed regulation circuits for small DC motors

M135K cylindrical grinder electrical schematic circuit

Micro defibrillator

Strain gauge pressure sensor adjustment circuit

Simple electronic lock

Simple long-distance wireless microphone circuit

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components