Transistor
2SC4562
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1748
2.1±0.1
Unit: mm
s
Features
q
q
q
0.425
1.25±0.1
0.425
High transition frequency f
T
.
Small collector output capacitance C
ob
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
50
50
5
50
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.7±0.1
0 to 0.1
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol :
AM
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
50
50
5
200
0.06
250
1.5
500
0.3
V
MHz
pF
min
typ
max
0.1
100
Unit
µA
µA
V
V
V
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
Q
200 ~ 400
AMQ
R
250 ~ 500
AMR
0.15
–0.05
+0.1
s
Absolute Maximum Ratings
(Ta=25˚C)
0.2
0.3
–0
+0.1
1
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2001 MAR
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