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2SC2500-B

Description
TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size145KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SC2500-B Overview

TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN, BIP General Purpose Small Signal

2SC2500-B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.9 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.5 V
Base Number Matches1
2SC2500
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
2SC2500
Strobe Flash Applications
Medium-Power Amplifier Applications
Unit: mm
High DC current gain and excellent h
FE
linearity
: h
FE (1)
= 140 to 600 (V
CE
= 1 V, I
C
= 0.5 A)
: h
FE (2)
= 70 (min), 200 (typ.), (V
CE
= 1 V, I
C
= 2 A)
Low saturation voltage
: V
CE (sat)
= 0.5 V (max) (I
C
= 2 A, I
B
= 50 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
30
30
10
6
2
5
0.5
900
150
−55
to 150
A
Unit
V
V
V
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1A
A
mW
°C
°C
Weight: 0.36 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21

2SC2500-B Related Products

2SC2500-B 2SC2500-D 2SC2500-A 2SC2500-C
Description TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN, BIP General Purpose Small Signal
Is it Rohs certified? incompatible incompatible incompatible incompatible
Parts packaging code TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 2 A 2 A 2 A 2 A
Collector-emitter maximum voltage 10 V 10 V 10 V 10 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 420 140 300
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.9 W 0.9 W 0.9 W 0.9 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V 0.5 V
Base Number Matches 1 1 1 1
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