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BA423AL

Description
DIODE SILICON, SIGNAL DIODE, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size29KB,4 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BA423AL Overview

DIODE SILICON, SIGNAL DIODE, Signal Diode

BA423AL Parametric

Parameter NameAttribute value
MakerNXP
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage20 V
surface mountYES
technologySCHOTTKY
Terminal formWRAP AROUND
Terminal locationEND
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BA423AL
AM band-switching diode
Product specification
Supersedes data of April 1992
1996 Mar 13

BA423AL Related Products

BA423AL BA423ALT/R
Description DIODE SILICON, SIGNAL DIODE, Signal Diode DIODE SILICON, SIGNAL DIODE, Signal Diode
Maker NXP NXP
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LELF-R2 O-LELF-R2
Number of components 1 1
Number of terminals 2 2
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal form WRAP AROUND WRAP AROUND
Terminal location END END
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