Power Bipolar Transistor, 0.75A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin,
| Parameter Name | Attribute value |
| Objectid | 2078570729 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 0.75 A |
| Collector-emitter maximum voltage | 100 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 20 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.8 W |
| Certification status | Qualified |
| Guideline | MIL-19500/263A |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 16 MHz |
京公网安备 11010802033920号
EEWORLD
