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BAX18

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size28KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance  
Download Datasheet Parametric View All

BAX18 Overview

Rectifier Diode,

BAX18 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionO-LALF-W2
Reach Compliance Codecompliant
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-204AH
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current9 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature200 °C
Maximum output current0.4 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.45 W
GuidelineTS 16949
Maximum repetitive peak reverse voltage75 V
Maximum reverse current5 µA
Maximum reverse recovery time0.05 µs
Reverse test voltage75 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BAX18
FEATURES :
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 75 V
• Repetitive peak forward current: max. 2 A.
• Pb / RoHS Free
SWITCHING DIODE
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
1.00 (25.4)
min.
Cathode
Mark
0.150 (3.8)
max.
MECHANICAL DATA :
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Average Forward Current
Maximum Repetitive Peak Forward Current
Maximum Non-repetitive Peak Forward Current at t = 10ms, Tj = 25°C
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RRM
V
R
I
F
I
F(AV)
I
FRM
I
FSM
P
D
T
J
T
S
Value
75
75
500
400
2
9
450
200
-65 to + 200
Unit
V
V
mA
mA
A
A
mW
°C
°C
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
Symbol
I
R
V
F
Cd
Trr
Test Condition
V
R
= 75 V
V
R
= 75 V, Tj = 150°C
I
F
= 300 mA
f = 1MHz ; V
R
= 0
I
F
= 30mA , I
R
= 30mA
I
RR
= 3mA , R
L
= 100
measured at I
R
= 3 mA
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
5
100
1.0
35
50
Unit
µA
V
pF
ns
Page 1 of 2
Rev. 02 : March 25, 2005
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