DIODE SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | O-PBCY-T3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | COMMON CATHODE, 2 ELEMENTS |
| Minimum diode capacitance ratio | 22.5 |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| JESD-30 code | O-PBCY-T3 |
| Number of components | 2 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | BOTTOM |