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BLF888_11

Description
UHF power LDMOS transistor
File Size145KB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF888_11 Overview

UHF power LDMOS transistor

BLF888
UHF power LDMOS transistor
Rev. 5 — 21 January 2011
Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor is optimized for digital applications and can deliver 110 W
average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The
excellent ruggedness of this device makes it ideal for digital transmitter applications.
Table 1.
Application information
RF performance at V
DS
= 50 V in a common source 860 MHz narrowband test circuit unless
otherwise specified.
Mode of operation
2-Tone, class AB
DVB-T (8k OFDM)
[1]
f
(MHz)
f
1
= 860; f
2
= 860.1
858
P
L(PEP)
P
L(AV)
G
p
(W)
500
-
(W)
250
110
(dB)
19
19
D
(%)
46
31
IMD3
32
-
IMD
shldr
-
31
[1]
(dBc) (dBc)
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
2-Tone performance at 860 MHz, a drain-source voltage V
DS
of 50 V and a quiescent
drain current I
Dq
= 1.3 A:
Peak envelope power load power = 500 W
Power gain = 19 dB
Drain efficiency = 46 %
Third order intermodulation distortion =
32
dBc
DVB performance at 858 MHz, a drain-source voltage V
DS
of 50 V and a quiescent
drain current I
Dq
= 1.3 A:
Average output power = 110 W
Power gain = 19 dB
Drain efficiency = 31 %
Shoulder distance =
31
dBc (4.3 MHz from center frequency)
Integrated ESD protection
Advanced flange material for optimum thermal behavior and reliability

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