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DF1506M

Description
Bridge Rectifier Diode, 1.5A, 600V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size55KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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DF1506M Overview

Bridge Rectifier Diode, 1.5A, 600V V(RRM),

DF1506M Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current50 A
Number of components4
Maximum operating temperature150 °C
Maximum output current1.5 A
Maximum repetitive peak reverse voltage600 V
surface mountNO
BL
GALAXY ELECTRICAL
DF15005M---DF1510M
GLASS PASSIVATED BRIDGE RECTIFIERS
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.5
Amperes
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
Lead Pb/Sn copper
The plastic material has UL flammability classification
94V-0
UL recognized file # E95060
DF
A
J
D
B C
DIM.
A
B
C
D
E
F
G
H
I
J
DF
MIN.
8.20
6.20
7.60
7.40
2.40
5.00
4.10
1.50
0.41
0.22
MAX.
8.50
6.50
8.90
7.60
2.60
5.20
4.60
1.70
0.51
0.30
E
H
I
F
G
MECHANICAL DATA
Polarity : As marked on Body
Weight : 0.02 ounces, 0.38 grams
Mounting position : Any
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
DF
15005M
50
35
50
DF
1501M
100
70
100
DF
1502M
200
140
200
DF
1504M
400
280
400
1.5
50
1.1
10
500
10.4
25
40
-55 to +150
-55 to +150
DF
1506M
600
420
600
DF
1508M
800
560
800
DF
1510M
1000
700
1000
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
@T
A
=
40 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 1.5A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I t Rating for fusing (t < 8.3ms)
Typical Junction
Capacitance per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
2
I
FSM
V
F
I
R
I t
C
J
R
0JA
2
A
V
uA
uA
AS
pF
C/W
2
@T
J
=25 C
@T
J
=125 C
T
J
T
STG
C
C
www.galaxycn.com
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal resistance from junction to ambient mounted on P.C.B
with 0.5 x 0.5"(13x13mm) copper pads.
BL
GALAXY ELECTRICAL
1
Document Number 0287085

DF1506M Related Products

DF1506M DF1510M DF1504M DF1508M DF1501M
Description Bridge Rectifier Diode, 1.5A, 600V V(RRM), Bridge Rectifier Diode, 1.5A, 1000V V(RRM), Bridge Rectifier Diode, 1.5A, 400V V(RRM), Bridge Rectifier Diode, 1.5A, 800V V(RRM), Bridge Rectifier Diode, 1.5A, 100V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A
Number of components 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Maximum repetitive peak reverse voltage 600 V 1000 V 400 V 800 V 100 V
surface mount NO NO NO NO NO

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