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APT1001R2HN

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size110KB,1 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
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APT1001R2HN Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

APT1001R2HN Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerADPOW
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)9 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
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