APT10053LNR datasheet, PDF - EEWORLD Datasheet

APT10053LNR: DescriptionPower Field-Effect Transistor, 20A I(D), 1000V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA; CategoryDiscrete semiconductor The transistor; File Size101KB，2 Pages; ManufacturerADPOW; Websitehttp://www.advancedpower.com/

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APT10053LNR Overview

Power Field-Effect Transistor, 20A I(D), 1000V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ADPOW
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Other features	AVALANCHE RATED
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (Abs) (ID)	20 A
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.53 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-264AA
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	520 W
Maximum power dissipation(Abs)	520 W
Maximum pulsed drain current (IDM)	80 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON

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