HY638256P-25 datasheet, PDF - EEWORLD Datasheet

HY638256P-25: DescriptionStandard SRAM, 32KX8, 25ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28; Categorystorage storage; File Size201KB，9 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY638256P-25 Overview

Standard SRAM, 32KX8, 25ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SK Hynix
Parts packaging code	DIP
package instruction	DIP, DIP28,.3
Contacts	28
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
length	34.671 mm
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum seat height	4.318 mm
Maximum standby current	0.002 A
Minimum standby current	4.5 V
Maximum slew rate	0.13 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	7.62 mm

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