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APT3565BN-GULLWING

Description
11 A, 350 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size161KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

APT3565BN-GULLWING Overview

11 A, 350 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

APT3565BN-GULLWING Parametric

Parameter NameAttribute value
MakerMicrosemi
Parts packaging codeTO-247
package instructionFLANGE MOUNT, R-PSFM-G3
Contacts3
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage350 V
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.65 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)115 pF
JESD-30 codeR-PSFM-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment180 W
Maximum pulsed drain current (IDM)44 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
Maximum off time (toff)75 ns
Maximum opening time (tons)52 ns

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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