2N1720 datasheet, PDF - EEWORLD Datasheet

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2N1720: Description1A, 60V, NPN, Si, POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size48KB，1 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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2N1720 Overview

1A, 60V, NPN, Si, POWER TRANSISTOR

2N1720 Parametric

Parameter Name	Attribute value
package instruction	POST/STUD MOUNT, O-MUPM-W3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	O-MUPM-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	UPPER
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Base Number Matches	1

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Description	1A, 60V, NPN, Si, POWER TRANSISTOR	1000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5	1000mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5	1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5	1A, 60V, NPN, Si, POWER TRANSISTOR	1A, 100V, NPN, Si, POWER TRANSISTOR	1A, 100V, NPN, Si, POWER TRANSISTOR	VHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-117, TO-117, 4 PIN	1000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
package instruction	POST/STUD MOUNT, O-MUPM-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	POST/STUD MOUNT, O-MUPM-W3	POST/STUD MOUNT, O-MUPM-W3	POST/STUD MOUNT, O-MUPM-W3	POST/STUD MOUNT, R-XRPM-F4	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow	_compli	_compli	_compli	unknow	unknow	unknow	unknow	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A	1 A	5 A	1 A
Collector-emitter maximum voltage	60 V	100 V	80 V	60 V	60 V	100 V	100 V	40 V	100 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	20	10	20	20	20	40	10	20
JESD-30 code	O-MUPM-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MUPM-W3	O-MUPM-W3	O-MUPM-W3	R-XRPM-F4	O-MBCY-W3
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	4	3
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	UNSPECIFIED	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	RECTANGULAR	ROUND
Package form	POST/STUD MOUNT	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	2 W	1 W	1 W	0.8 W	2 W	2 W	2 W	40 W	0.8 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	FLAT	WIRE
Terminal location	UPPER	BOTTOM	BOTTOM	BOTTOM	UPPER	UPPER	UPPER	RADIAL	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	40 MHz	40 MHz	50 MHz	50 MHz	50 MHz	50 MHz	400 MHz	50 MHz
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	-	COLLECTOR
Base Number Matches	1	1	1	1	1	1	1	1	-
JEDEC-95 code	-	TO-5	TO-5	TO-5	-	-	-	TO-117	TO-5

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