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2SC4602M

Description
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, SMP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size98KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SC4602M Overview

Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, SMP, 3 PIN

2SC4602M Parametric

Parameter NameAttribute value
Objectid1483104806
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum collector current (IC)3 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment50 W
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz

2SC4602M Related Products

2SC4602M 2SC4602-K 2SC4602-M 2SC4602K 2SC4602L 2SC4602-L
Description Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, SMP, 3 PIN 3A, 800V, NPN, Si, POWER TRANSISTOR, SMP, 3 PIN 3A, 800V, NPN, Si, POWER TRANSISTOR, SMP, 3 PIN Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, SMP, 3 PIN Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, SMP, 3 PIN Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, SMP, 3 PIN
Objectid 1483104806 1428957301 1428957307 1483104798 1483104801 1483104801
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Maximum collector current (IC) 3 A 3 A 3 A 3 A 3 A 3 A
Collector-emitter maximum voltage 800 V 800 V 800 V 800 V 800 V 800 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 10 20 10 15 15
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power consumption environment 50 W 50 W 50 W 50 W 50 W 50 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz 15 MHz
ECCN code EAR99 - - EAR99 EAR99 EAR99
Maximum power dissipation(Abs) 50 W - - 50 W 50 W 50 W
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