UNISONIC TECHNOLOGIES CO., LTD
2SB772
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The UTC 2SB772 is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and voltage
regulator.
PNP SILICON TRANSISTOR
1
TO-126
1
TO-126C
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SD882
1
TO-92NL
1
TO-251
1
TO-252
*Pb-free plating product number: 2SB772L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SB772-x-T60-K
2SB772L-x-T60-K
2SB772-x-T6C-K
2SB772L-x-T6C-K
2SB772-x-TM3-T
2SB772L-x-TM3-T
2SB772-x-TN3-R
2SB772L-x-TN3-R
2SB772-x-TN3-T
2SB772L-x-TN3-T
2SB772S-x-T9N-B
2SB772SL-x-T9N-B
2SB772S-x-T9N-K
2SB772SL-x-T9N-K
2SB772S-x-T9N-R
2SB772SL-x-T9N-R
Package
TO-126
TO-126C
TO-251
TO-252
TO-252
TO-92NL
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
C
B
E
C
B
B
C
E
B
C
E
B
C
E
E
C
B
E
C
B
E
C
B
Packing
Bulk
Bulk
Tube
Tape Reel
Tube
Tape Box
Bulk
Bulk
2SB772L-x-T60-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) K: Bulk, T: Tube, R: Tape Reel
(2) T60: TO-126, T6C: TO-126C, TM3: TO-251,
TN 3: TO-252, T9N: TO-92NL
(3) x: refer to Classification of h
FE2
(4) L: Lead Free Plating, Blank: Pb/Sn
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QW-R213-016,C
2SB772
ABSOLUTE MAXIMUM RATINGS
(Ta = 25
℃
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
PNP SILICON TRANSISTOR
RATINGS
UNIT
Collector-Base Voltage
-40
V
Collector-Emitter Voltage
-30
V
Emitter-Base Voltage
-5
V
Pulse
-7
A
Collector Current
-3
A
DC
Base Current
-0.6
A
Tc=25
℃
10
W
Collector Dissipation
P
D
Ta=25
℃
1
W
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25
℃
, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE1
DC Current Gain(Note 1)
h
FE2
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter Saturation Voltage
V
BE(SAT)
Current Gain Bandwidth Product
f
T
Output Capacitance
Cob
Note 1: Pulse test: P
W
<300
µ
s, Duty Cycle<2%
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
TEST CONDITIONS
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-30V ,I
E
=0
V
CE
=-30V ,I
B
=0
V
EB
=-3V, I
C
=0
V
CE
=-2V, I
C
=-20mA
V
CE
=-2V, I
C
=-1A
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
V
CE
=-5V, I
C
=-0.1A
V
CB
=-10V, I
E
=0,f=1MHz
MIN
-40
-30
-5
TYP
MAX
UNIT
V
V
V
nA
nA
nA
-1000
-1000
-1000
30
100
200
150
-0.3
-1.0
80
45
400
-0.5
-2.0
V
V
MHz
pF
CLASSIFICATION OF h
FE2
RANK
RANGE
Q
100 ~ 200
P
160 ~ 320
E
200 ~ 400
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QW-R213-016.C
2SB772
■
TYPICAL CHARACTERICS
Static Characteristics
PNP SILICON TRANSISTOR
Derating Curve of Safe Operating Areas
150
1.6
-Collector Current, Ic (A)
-I
B
=9mA
- Ic Derating (%)
-I
B
=8mA
-I
B
=7mA
1.2
100
-I
B
=6mA
-I
B
=5mA
S/b
l
0.8
im
ite
d
tio
ip a
ss
Di
-I
B
=4mA
-I
B
=3mA
0.4
50
nl
ite
im
-I
B
=2mA
-I
B
=1mA
d
0
0
4
8
12
16
20
0
-50
0
50
100
150
200
-Collector-Emitter voltage (V)
Case Temperature, Tc (
℃
)
Power Derating
3
Collector Output Capacitance
10
12
Output Capacitance(pF)
I
E
=0
f=1MHz
10
2
Power Dissipation(W)
8
10
1
4
0
-50
0
50
100
150
200
10
0
10
0
10
-1
10
-2
10
-3
Case Temperature, Tc (
℃
)
-Collector-Base Voltage(v)
Current Gain -
Bandwidth Product
10
3
10
1
Safe Operating Area
Ic (max),Pulse
S
1m
0.
10
m
S
1m
S
Ic(max),DC
Current Gain-
Bandwidth Product, f
T
(MHz)
V
CE
=5V
2
-Collector Current, Ic (A)
0
1
10
10
0
I
B
=8mA
10
1
10
-1
10
0
10
-2
10
-1
10
10
10
-2
10
0
10
1
10
2
Collector Current, Ic (A)
Collector-Emitter Voltage
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QW-R213-016.C
2SB772
■
TYPICAL CHARACTERICS(Cont.)
PNP SILICON TRANSISTOR
DC Current Gain
3
10
10
4
Saturation Voltage
V
CE
=-2V
DC Current Gain, h
FE
-Saturation Voltage (mV)
10
3
V
BE(SAT )
2
10
10
2
1
10
V
CE(SAT )
10
1
0
10
0
10
1
10
2
10
3
10
4
10
10
0
0
10
1
10
10
2
3
10
4
10
-Collector Current Ic (mA)
,
-Collector Current, Ic (mA)
U TC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
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QW-R213-016.C
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