MCC162-12io1
Thyristor Module
V
RRM
I
TAV
V
T
=
2x 1200 V
=
=
181 A
1.03 V
Phase leg
Part number
MCC162-12io1
Backside: isolated
3
6
7
1
5
4
2
Features / Advantages:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
●
Direct Copper Bonded Al2O3-ceramic
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
Y4
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408b
© 2016 IXYS all rights reserved
MCC162-12io1
Thyristor
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 125 °C
T
VJ
= 125 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max. Unit
1300
V
1200
300
10
1.09
1.25
1.03
1.25
181
300
0.88
1.15
0.070
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 125 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 125 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 125 °C
273
120
60
8
T
VJ
= 125 °C; f = 50 Hz
repetitive, I
T
= 540 A
t
P
= 200 µs; di
G
/dt = 0.5 A/µs;
I
G
=
0.5 A; V =
⅔
V
DRM
non-repet., I
T
= 180 A
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 125°C
T
VJ
= 25 °C
0.5 A/µs
T
VJ
= 25 °C
T
VJ
= 25 °C
0.5 A/µs
150
µs
20 V/µs t
p
= 200 µs
200
2
mA
µs
V =
⅔
V
DRM
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
t
p
=
I
G
=
30 µs
0.5 A; di
G
/dt =
645
6.00
6.48
5.10
5.51
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
kA
kA
kA
kA
V
R/D
= 1200 V
V
R/D
= 1200 V
I
T
= 150 A
I
T
= 300 A
I
T
= 150 A
I
T
= 300 A
I
TAV
I
T(RMS)
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 85 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.155 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
180.0 kA²s
174.7 kA²s
130.1 kA²s
126.3 kA²s
pF
W
W
W
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 500 µs
average gate power dissipation
critical rate of rise of current
150 A/µs
500 A/µs
1000 V/µs
2.5
2.6
150
200
0.2
10
300
V
V
mA
mA
V
mA
mA
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
=
0.5 A; di
G
/dt =
turn-off time
V
R
= 100 V; I
T
= 300 A; V =
⅔
V
DRM
T
VJ
=100 °C
di/dt = 10 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408b
© 2016 IXYS all rights reserved
MCC162-12io1
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
Y4
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
300
125
100
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
150
2.25
4.5
14.0
16.0
10.0
16.0
3600
3000
2.75
5.5
Date Code (DC)
+
Production
Index (PI)
Circuit
yywwAA
Part Number
Lot.No: xxxxxx
Data Matrix:
part no.
(1-19), DC +
PI
(20-25),
lot.no.#
(26-31),
blank
(32),
serial no.#
(33-36)
Ordering
Standard
Ordering Number
MCC162-12io1
Marking on Product
MCC162-12io1
Delivery Mode
Box
Quantity
6
Code No.
429597
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 125 °C
V
0 max
R
0 max
0.88
0.8
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408b
© 2016 IXYS all rights reserved
MCC162-12io1
Outlines Y4
a
p
M6
2.8 / 0.8
Dim.
a
b
c
d
e
MIN
[mm]
30.0
64.0
6.5
4.9
28.6
7.3
93.5
79.5
4.8
33.4
16.7
22.7
22.7
14.0
22.8
1.8
MAX
[mm]
30.6
65.0
7.0
5.1
29.2
7.7
94.5
80.5
5.2
34.0
17.3
23.3
23.3
15.0
23.3
2.4
MIN
[inch]
1.181
2.520
0.256
0.193
1.126
0.287
3.681
3.130
0.189
1.315
0.657
0.894
0.894
0.551
0.898
0.071
MAX
[inch]
1.205
2.559
0.275
0.201
1.150
0.303
3.720
3.169
0.205
1.339
0.681
0.917
0.917
0.591
0.917
0.041
typ. 0.25
typ. 0.010
c
h
i
1
0
A
f
f
g
h
i
q
6
k
j
k
l
m
n
1
1
8
o
1
2
3
C
7
C
B
5
o
p
q
r
n
m
l
B
4
typ. 10.5
typ. 0.413
9
A (3:1)
b
DCB
B-B (1:1)
j
r
C-C (1:1)
g
e
n
d
3
6
7
1
5
4
2
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408b
© 2016 IXYS all rights reserved
MCC162-12io1
Thyristor
5000
50 Hz
80% V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
10
6
320
280
240
DC
180° sin
120°
60°
30°
4000
I
TSM
3000
I
2
dt
10
5
T
VJ
= 45°C
T
VJ
= 125°C
I
TAVM
[A]
200
160
120
80
40
[A]
2000
[A
2
s]
1000
0
0.001
10
4
0.01
0.1
1
1
10
0
0
25
50
75 100 125 150
t [s]
Fig. 1 Surge overload current I
TSM
,
I
FSM
: Crest value, t: duration
400
360
320
280
2
t [ms]
Fig. 2 I t versus time (1-10 ms)
T
C
[°C]
Fig. 3 Max. forward current
at case temperature
100
R
thKA
K/W
0.3
0.4
0.5
0.6
0.8
1.0
1.4
1.8
DC
180° sin
120°
60°
30°
t
p
= 30 µs
t
p
= 500 µs
P
GM
= 120 W
60 W
10
P = 8 W
GAV
P
tot
240
200
V
G
[V]
1
I
GT
(T
VJ
= -40°C)
I
GT
(T
VJ
= 0°C)
I
GT
(T
VJ
= 25°C)
I
GD
125°C
25°C
[W]
160
120
80
40
0
0
50
100 150 200 250
0
25
50
75
100
125
150
0.1
0.01
0.1
1
10
I
TAVM
[A]
T
a
[°C]
I
G
[A]
Fig. 5 Gate trigger characteristics
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
100
1400
1200
1000
Circuit
B6
3xMCC162 or
3x MCD162
R
thKA
K/W
0.03
0.04
0.06
0.08
0.1
0.15
0.2
0.3
T
VJ
= 25°C
10
P
tot
[W]
800
600
400
200
0
0
100
200
300
400
500 0
25
50
75
100
t
gd
[μs]
1
limit
typ.
125
150
0.1
0.01
0.1
1
10
I
dAVM
[A]
T
a
[°C]
I
G
[A]
Fig. 7 Gate trigger delay time
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408b
© 2016 IXYS all rights reserved
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