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2SC3421O

Description
TRANSISTOR 1 A, 120 V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, 2-8H1A, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size174KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC3421O Overview

TRANSISTOR 1 A, 120 V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, 2-8H1A, 3 PIN, BIP General Purpose Power

2SC3421O Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
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