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2SC4983-5

Description
Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size95KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC4983-5 Overview

Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN

2SC4983-5 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1481158309
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)135
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Ordering number:ENN4661
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1881/2SC4983
Low-Frequency
General-Purpose Amplifier Applications
Features
Æ AF power amplifier, medium-speed switching, small-
sized motor drivers and LED drivers.
Package Dimensions
unit:mm
2018B
[2SA1881/2SC4983]
Features
Æ Large current capacity.
Æ Low collector-to-emitter saturation voltage.
Æ Ultrasmall-sized pakage permitting 2SA1881/
2SC4983-appied set to be made smaller and slimmer.
0.5
0.4
3
0.16
0 to 0.1
1
0.95 0.95
2
1.9
2.9
0.8
1.1
0.5
1.5
2.5
( ) : 2SA1881
Specifications
Absolute Maximum Ratings
at Ta = 25ßC
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Ratings
(–)15
(–)15
(–)5
(–)1
(–)3
(–)200
250
150
–55 to +150
Unit
V
V
V
A
A
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25ßC
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=(–)12V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)50mA
VCE=(–)2V, IC=(–)800mA
135*
80
Conditions
Ratings
min
typ
max
(–)100
(–)100
600*
Unit
nA
nA
* : The 2SA1881/2SC4983 are classified by 50mA h
FE
as follows :
Rank
hFE
5
135 to 270
6
200 to 400
7
300 to 600
Continued on next page.
Marking : 2SA1881 : IS
2SC4983 : KN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/51694TH (KOTO) A8-9412 No.4661—1/4

2SC4983-5 Related Products

2SC4983-5 2SA1881-5 2SC4983-6 2SC4983-7 2SA1881-7 2SA1881-6
Description Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Objectid 1481158309 1481158192 1481158315 1481158321 1481158204 1481158198
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 15 V 15 V 15 V 15 V 15 V 15 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 135 135 200 300 300 200
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN PNP NPN NPN PNP PNP
Maximum power dissipation(Abs) 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 300 MHz 200 MHz 200 MHz 300 MHz 300 MHz
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