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2SC3422-O

Description
TRANSISTOR 3 A, 40 V, NPN, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size146KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SC3422-O Overview

TRANSISTOR 3 A, 40 V, NPN, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Power

2SC3422-O Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
package instructionLEAD FREE, 2-8H1A, 3 PIN
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)3 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment10 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceNOT SPECIFIED
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.8 V
Base Number Matches1
2SC3422
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
2SC3422
Audio Frequency Power Amplifier
Low-Speed Switching
Unit: mm
Suitable for the output stage of 5-watt car radios and car stereos.
Good h
FE
linearity
Complementary to 2SA1359.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
40
40
5
3
1
1.5
10
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-8H1A
Note1: Using continuously under heavy loads (e.g. the application of high
Weight: 0.82 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21

2SC3422-O Related Products

2SC3422-O 2SC3422-Y
Description TRANSISTOR 3 A, 40 V, NPN, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Power TRANSISTOR 3 A, 40 V, NPN, Si, POWER TRANSISTOR, 2-8H1A, 3 PIN, BIP General Purpose Power
Is it lead-free? Contains lead Contains lead
package instruction LEAD FREE, 2-8H1A, 3 PIN FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
Maximum collector current (IC) 3 A 3 A
Collector-emitter maximum voltage 40 V 40 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 80 120
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power consumption environment 10 W 10 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
VCEsat-Max 0.8 V 0.8 V
Base Number Matches 1 1
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