SS9012
SS9012
1W Output Amplifier of Potable Radios in
Class B Push-pull Operation.
•
•
•
•
High total power dissipation. (P
T
=625mW)
High Collector Current. (I
C
= -500mA)
Complementary to SS9013
Excellent h
FE
linearity.
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-40
-20
-5
-500
625
150
-55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Test Condition
I
C
= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -25V, I
E
=0
V
EB
= -3V, I
C
=0
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -500mA
I
C
= -500mA, I
B
= -50mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -1V, I
C
= -10mA
-0.6
64
40
120
90
-0.18
-0.95
-0.67
Min.
-40
-20
-5
-100
-100
202
-0.6
-1.2
-0.7
V
V
V
Typ.
Max.
Units
V
V
V
nA
nA
h
FE
Classification
Classification
h
FE1
D
64 ~ 91
E
78 ~ 112
F
96 ~ 135
G
112 ~ 166
H
144 ~ 202
©2000 Fairchild Semiconductor International
Rev. A, February 2000
SS9012
Typical Characteristics
-50
1000
I
B
=-300uA
I
B
=-250uA
V
CE
= -1V
I
C
[mA], COLLECTOR CURRENT
-40
I
B
=-200uA
-30
I
B
=-150uA
I
B
=-100uA
h
FE
, DC CURRENT GAIN
100
-20
I
B
=-50uA
-10
-0
-0
-10
-20
-30
-40
-50
10
-10
-100
-1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-1000
1000
V
BE
(sat)
V
CE
=-6V
100
-100
V
CE
(sat)
10
I
C
=10I
B
-10
-10
-100
-1000
1
-1
-10
-100
-1000
-10000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
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©2000 Fairchild Semiconductor International
Rev. E
ARM Technology
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