VN30N
HIGH SIDE SMART POWER SOLID STATE RELAY
PRELIMINARY DATA
TYPE
VN30N
s
V
DSS
60 V
R
DS( on)
0.03
Ω
I
OUT
45 A
V
C C
26 V
s
s
s
s
s
OUTPUT CURRENT (CONTINUOUS): 45A @
T
c
=25
o
C
5V LOGIC LEVEL COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE SHUT-DOWN
OPEN DRAIN DIAGNOSTIC OUTPUT
VERY LOW STAND-BY POWER
DISSIPATION
PENTAWATT
(vertical)
PENTAWATT
(horizontal)
DESCRIPTION
The VN30N is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
BLOCK DIAGRAM
PENTAWATT
(in-line)
ORDER CODES:
PENTAWATT vertical
VN30N
PENTAWATT horizontal VN30N (011Y)
PENTAWATT in-line
VN30N (012Y)
September 1994
1/10
VN30N
ELECTRICAL CHARACTERISTICS
(continued)
PROTECTION AND DIAGNOSTICS (continued)
Symbol
V
S CL
(•)
t
S C
Parameter
Status Clamp Voltage
Switch-off Time in
Short Circuit Condition
at Start-Up
Over Current
Average Current in
Short Circuit
Open Load Current
Level
Thermal Shut-down
Temperature
Reset Temperature
Test Conditions
I
STAT
= 10 mA
I
STAT
= -10 mA
R
LOA D
< 10 mΩ
T
c
= 25
o
C
Min.
Typ.
6
-0.7
1
Max.
Unit
V
V
ms
I
OV
I
AV
I
OL
T
TS D
T
R
R
LOA D
< 10 mΩ
R
LOA D
< 10 mΩ
-40
≤
T
c
≤
125
o
C
T
c
= 85
o
C
5
140
125
140
2.5
1250
A
A
mA
o
C
C
o
(*) The V
IH
is internally cl amped at 6V about. It is possibl e to connect this pin to an higher voltage via an external resi stor
cal culated to not exceed 10 mA at the i nput pin.
(•) Status determination > 100
µs
after the switching edge.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
o
C. When the
temperature returns to about 125
o
C the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING THE DEVICE AGAINST REVER-
SE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
–
If the input is pulled to power GND, a negative
voltage of -V
F
is seen by the device. (V
IL
, V
IH
thresholds and V
STAT
are increased by V
F
with
respect to power GND).
–
The undervoltage shutdown level is increased
by V
F
.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of V
IH
, V
IL
and V
STAT
takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
4/10
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