Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
| Parameter Name | Attribute value |
| Reach Compliance Code | unknow |
| Maximum collector current (IC) | 2 A |
| Collector-emitter maximum voltage | 400 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 8 |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| VCEsat-Max | 1 V |
| Base Number Matches | 1 |
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