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2SC3437YTE85R

Description
TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size232KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC3437YTE85R Overview

TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

2SC3437YTE85R Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)400 MHz
VCEsat-Max0.3 V
Base Number Matches1
2SC3437
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC3437
Ultra High Speed Switching Applications
Computer, Counter Applications
High transition frequency: f
T
= 400 MHz (typ.)
Low saturation voltage: V
CE (sat)
= 0.3 V (max)
High speed switching time: t
stg
= 15 ns (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
40
15
5
200
40
150
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-236MOD
SC-59
TOSHIBA
2-3F1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.012 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01
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