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BZX85C10-T-M

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size79KB,5 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Download Datasheet Parametric View All

BZX85C10-T-M Overview

Zener Diode,

BZX85C10-T-M Parametric

Parameter NameAttribute value
MakerRectron Semiconductor
Reach Compliance Codecompliant
Diode typeZENER DIODE
BZX85Cxx
-T-M
AXIAL LEADED SILICON ZENER DIODES
VOLTAGE RANGE: 2.4 - 200V
POWER: 1.3Wa tts
FEATURES
*
*
*
*
Complete Voltage Range 2.4 to 200 Volts
High peak reverse power dissipation
High reliability
Low leakage current
MECHANICAL DATA
*
*
*
*
*
Case: DO-41 Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.339 gram
1.0 (25.4)
MIN.
.034 (0.9)
DIA.
.028 (0.7)
.205 (5.2)
.166 (4.2)
.107 (2.7)
.080 (2.0)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
o
Rating
DC Power Dissipation at T
L
= 50
°
C (Note1)
Maximum Forward Voltage at I
F
= 200 mA
Maximum Thermal Resistance Junction to Ambient Air (Note2)
Junction Temperature Range
Storage Temperature Range
Note :
Symbol
P
D
V
F
RθJA
T
J
Ts
Value
1.3
1.0
130
- 55 to + 175
- 55 to + 175
Unit
Watts
Volts
K/W
°
C
°
C
2019-06/08
REV:B
(1) T
L
= Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
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