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MMFT3055ELT1

Description
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,1.5A I(D),TO-261AA
CategoryDiscrete semiconductor    The transistor   
File Size557KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MMFT3055ELT1 Overview

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,1.5A I(D),TO-261AA

MMFT3055ELT1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSingle
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)1.5 A
Maximum drain current (ID)1.5 A
Maximum drain-source on-resistance0.18 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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