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2SC2881O

Description
Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size112KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

2SC2881O Overview

Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

2SC2881O Parametric

Parameter NameAttribute value
Parts packaging codeSOT-89
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
UTC 2SC2881
NPN EPITAXIAL SILICON TRANSISTOR
VOLTAGE AMPLIFIER
APPLICATIONS POWER
AMPLIFIER APPLICATIONS
FEATURES
* High voltage: V
CEO
= 120V
* High transition frequency: f
T
=120MHz(typ.)
* Pc=1.0 ~ 2.0 W(mounted on ceramic substrate)
* Complementary to 2SA1201
1
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
SYMBOL
RATINGS
120
120
5
800
160
500
1000
150
-55 ~ 150
UNIT
V
V
V
mA
mA
mW
°C
°C
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
T
j
Storage temperature range
T
stg
Note 1: Mounted on ceramic substrate( 250mm
2
×0.8t
)
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
SYMBOL
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
f
T
C
ob
TEST CONDITION
I
C
=10mA, I
B
=0
I
E
=1mA, Ic=0
V
CB
=120V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=100mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=100mA
V
CB
=10V, f=1MHz, I
E
=0
MIN
120
5
TYP
MAX UNIT
V
V
μA
μA
V
V
MHz
pF
80
0.1
0.1
240
1.0
1.0
120
30
CLASSIFICATION OF h
FE
RANK
RANGE
O
80 - 160
Y
120 - 240
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R208-032,A

2SC2881O Related Products

2SC2881O 2SC2881Y
Description Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN
Parts packaging code SOT-89 SOT-89
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.8 A 0.8 A
Collector-emitter maximum voltage 120 V 120 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 80 120
JESD-30 code R-PSSO-F3 R-PSSO-F3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 1 W 1 W
surface mount YES YES
Terminal form FLAT FLAT
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz
Base Number Matches 1 1
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