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MJE13004TUBE

Description
Power Bipolar Transistor, 4A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size274KB,4 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Download Datasheet Parametric Compare View All

MJE13004TUBE Overview

Power Bipolar Transistor, 4A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

MJE13004TUBE Parametric

Parameter NameAttribute value
MakerCDIL[Continental Device India Pvt. Ltd.]
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)4 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
GuidelineTS 16949
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC POWER TRANSISTORS
MJE13004
MJE13005
TO-220
Plastic Package
Switchmode Series NPN Silicon Power Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Sustaining Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
*Peak
Base Current Continuous
*Peak
Emitter Current Continuous
*Peak
Power Dissipation upto T
a=
25ºC
Derate above=25ºC
Power Dissipation upto T
c
=25ºC
Derate above=25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V
CEO (sus)
V
CEV
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
T
j,
T
stg
MJE13004
300
600
9
4
8
2
4
6
12
2
16
75
600
- 65 to +150
MJE13005
400
700
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ºC
W
mW/ºC
ºC
* Pulse Test: Pulse Width =5ms, Duty Cycle<10%
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Maxmium Lead Temperature for
Soldering Purpose 1/8" from Case for 5
Seconds
R
th (j-c)
R
th (j-a)
T
L
1.67
62.5
275
ºC/W
ºC/W
ºC
ELECTRICAL CHARACTERISTICS (T
c
=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
**V
CEO(sus)
I
C
=10mA, I
B
=0
Collector Emitter sustaining voltage
MJE13004
MJE13005
I
CEV
V
CEV
=Rated Value,V
BE
=(off)=1.5V
Collector Cut off Current
T
C
=100ºC
V
CEV
=Rated Value,V
BE
=(off)=1.5V
V
EB
=9V, I
C
=0
I
C
=1A, V
CE
=5V
I
C
=2A, V
CE
=5V
MIN
300
400
TYP
MAX
UNIT
V
V
mA
mA
mA
1.0
5.0
1.0
60
40
Emitter Cut off Current
DC Current Gain
I
EBO
**h
FE
10
8
**Pulse Test: Pulse Width=300µs, Duty Cycle<2%
µ
Continental Device India Limited
Data Sheet
Page 1 of 4

MJE13004TUBE Related Products

MJE13004TUBE MJE13005BULK
Description Power Bipolar Transistor, 4A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Maker CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.]
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant compliant
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 4 A 4 A
Collector-emitter maximum voltage 300 V 400 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 8 8
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Guideline TS 16949 TS 16949
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 4 MHz 4 MHz
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