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2SC2881-Y(TE12L,C)

Description
Trans GP BJT NPN 120V 0.8A 4-Pin(3+Tab) PW-Mini T/R
CategoryDiscrete semiconductor    The transistor   
File Size141KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SC2881-Y(TE12L,C) Overview

Trans GP BJT NPN 120V 0.8A 4-Pin(3+Tab) PW-Mini T/R

2SC2881-Y(TE12L,C) Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Factory Lead Time16 weeks
Base Number Matches1
2SC2881
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC2881
Voltage Amplifier Applications
Power Amplifier Applications
High voltage: V
CEO
= 120 V
High transition frequency: f
T
= 120 MHz (typ.)
Small flat package
P
C
= 1.0 to 2.0 W (mounted on ceramic substrate)
Complementary to 2SA1201
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
Storage temperature range
T
j
T
stg
Rating
120
120
5
800
160
500
1000
150
−55
to 150
mW
Unit
V
V
V
mA
mA
PW-MINI
JEDEC
JEITA
TOSHIBA
SC-62
2-5K1A
°C
°C
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm
2
× 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21

2SC2881-Y(TE12L,C) Related Products

2SC2881-Y(TE12L,C) 2SC2881-O 2SC2881OTE12R 2SC2881OTE12L 2SC2881-Y 2SC2881YTE12L 2SC2881YTE12R 2SC2881TE12L 2SC2881TE12R
Description Trans GP BJT NPN 120V 0.8A 4-Pin(3+Tab) PW-Mini T/R TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow
Base Number Matches 1 1 1 1 1 1 1 1 1
package instruction - SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection - COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) - 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
Collector-based maximum capacity - 30 pF 30 pF 30 pF 30 pF 30 pF 30 pF 30 pF 30 pF
Collector-emitter maximum voltage - 120 V 120 V 120 V 120 V 120 V 120 V 120 V 120 V
Configuration - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) - 80 80 80 120 120 120 80 80
JESD-30 code - R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components - 1 1 1 1 1 1 1 1
Number of terminals - 3 3 3 3 3 3 3 3
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - NPN NPN NPN NPN NPN NPN NPN NPN
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount - YES YES YES YES YES YES YES YES
Terminal form - FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications - AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials - SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) - 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz
VCEsat-Max - 1 V 1 V 1 V 1 V 1 V 1 V 1 V 1 V
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