2SD2122(L)/(S), 2SD2123(L)/(S)
Silicon NPN Epitaxial
ADE-208-926 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SB1409(L)/(S)
Outline
DPAK
4
4
1
2
3
12
S Type
3
1. Base
2. Collector
3. Emitter
4. Collector
L Type
2SD2122(L)/(S), 2SD2123(L)/(S)
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
1
Tj
Tstg
2SD2122(L)/(S) 2SD2123(L)/(S) Unit
180
120
5
1.5
3
18
150
–55 to +150
180
160
5
1.5
3
18
150
–55 to +150
V
V
V
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
2SD2122(L)/(S)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Min
180
120
5
—
60
30
—
—
—
—
Typ
—
—
—
—
—
—
—
—
180
14
Max
—
—
—
10
200
—
1
1.5
—
—
2SD2123(L)/(S)
Min
180
160
5
—
60
30
—
—
—
—
Typ
—
—
—
—
—
—
—
—
180
14
Max
—
—
—
10
200
—
1
1.5
—
—
V
V
MHz
pF
Unit
V
V
V
µA
A
Test conditions
I
C
= 1 mA, I
E
= 0
I
C
= 10 mA, R
BE
=
∞
I
E
= 1 mA, I
C
= 0
V
CB
= 160 V, I
E
= 0
V
CE
= 5 V, I
C
= 150 mA*
1
V
CE
= 5 V, I
C
= 500 mA*
1
I
C
= 500 mA,
I
B
= 50 mA*
1
V
CE
= 5 V, I
C
= 150 mA*
1
V
CE
= 5 V, I
C
= 150 mA*
1
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
DC current transfer ratio h
FE1
*
2
h
FE2
Collector to emitter
saturation voltage
V
CE(sat)
Base to emitter voltage V
BE
Gain bandwidth product f
T
Collector output
capacitance
Cob
Notes: 1. Pulse test
2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by h
FE1
as follows.
B
60 to 120
C
100 to 200
2
2SD2122(L)/(S), 2SD2123(L)/(S)
Maximum Collector Dissipation Curve
30
Collector power dissipation Pc (W)
10
3.0
1.0
0.3
0.1
0.03
0.01
0
50
100
Case temperature T
C
(°C)
150
3
2SD2122
10
30
100
300
Collector to emitter voltage V
CE
(V)
2SD2123
Area of Safe Operation
Collector current I
C
(A)
I
C (max)
20
on
ati
er )
Op 25
°
C
DC =
(T
C
10
Typical Output Characteristics
1.0
10
98 7
6
5
4
3
0.4
2
0.2
1 mA
I
B
= 0
0
T
C
= 25°C
P
C
DC Current Transfer Ratio
vs. Collector Current
1,000
DC current transfer ratio h
FE
V
CE
= 5 V
Ta = 25°C
300
Collector current I
C
(A)
0.8
=
0.6
18
W
100
30
10
20
30
40
50
Collector to emitter voltage V
CE
(V)
10
0.03
0.1
0.3
1.0
Collector current I
C
(A)
3.0
3
2SD2122(L)/(S), 2SD2123(L)/(S)
Collector to emitter saturation voltage V
CE (sat)
(V)
Base to emitter saturation voltage V
BE (sat)
(V)
Saturation Voltage vs. Collector Current
1.0
Saturation Voltage vs. Collector Current
10
0.3
3.0
0.1
1.0
0.03
Ta = 25°C
l
C
= 10 l
B
0.01
0.03
0.1
0.3
1.0
Collector current I
C
(A)
3.0
0.3
Ta = 25°C
l
C
= 10 l
B
0.1
0.03
0.1
0.3
1.0
Collector current I
C
(A)
3.0
Typical Transfer Characteristics
2.0
Gain bandwidth product f
T
(MHz)
1,000
Gain Bandwidth Product
vs. Collector Current
Collector current I
C
(A)
1.6
300
1.2
100
0.8
0.4
V
CE
= 5 V
Ta = 25°C
0
0.4
0.8
1.2
1.6
Base to emitter voltage V
BE
(V)
2.0
30
V
CE
= 5 V
Ta = 25°C
0.03
0.1
0.3
Collector current I
C
(A)
1.0
10
0.01
4
2SD2122(L)/(S), 2SD2123(L)/(S)
Collector Output Capacitance
vs. Collector to Base Voltage
Collector output capacitance C
ob
(pF)
100
30
10
3
f = 1 MHz
I
E
= 0
Ta = 25°C
1
3
10
30
100
Collector to base voltage V
CB
(V)
1
5
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