This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1820
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1219
Features
Package
Code
SMini3-G1
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector power dissipation
T
stg
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Symbol
V
CBO
V
CEO
I
CBO
h
FE2
f
T
V
EBO
co
Collector-base cutoff current (Emitter open)
/D
Forward current transfer ratio
*1
is
h
FE1 *2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Marking symbol
Q
85 to 170
WQ
R
120 to 240
WR
S
170 to 340
WS
No-rank
85 to 340
M
ai
Collector output capacitance
(Common base, input open circuited)
nt
en
Transition frequency
an
Collector-emitter saturation voltage
*1
V
CE(sat)
C
ob
Product of no-rank is not classified and have no marking symbol for rank.
Pl
e
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
Rating
30
25
5
Unit
V
V
V
Name
Pin
1. Base
2. Emitter
3. Collector
M
Di ain
sc te
on na
tin nc
ue e/
d
Low collector-emitter saturation voltage V
CE(sat)
S-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
500
1
150
150
mA
A
mW
°C
°C
–55 to +150
Conditions
Min
30
5
25
I
C
= 10
mA,
I
E
= 0
I
C
= 2 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
Marking Symbol: W
Typ
Max
Unit
V
V
V
nt
in
ue
V
CB
= 20 V, I
E
= 0
0.1
mA
V
V
CE
= 10 V, I
C
= 150 mA
V
CE
= 10 V, I
C
= 500 mA
85
40
340
ce
I
C
= 300 mA, I
B
= 30 mA
0.35
200
6
0.60
V
CB
= 10 V, I
E
= –50 mA, f = 200 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
MHz
pF
15
Publication date : October 2008
SJC00227DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1820
P
C
T
a
240
800
700
I
C
V
CE
T
a
=
25°C
I
B
=
10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
800
700
I
C
I
B
V
CE
=
10 V
T
a
=
25°C
Collector power dissipation P
C
(mW)
200
Collector current I
C
(mA)
Collector current I
C
(mA)
600
500
400
300
200
100
600
500
400
300
200
100
160
120
80
40
0
0
40
80
120
160
0
0
4
8
12
16
20
0
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
0
2
4
6
8
10
Base current I
B
(mA)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
V
BE(sat)
I
C
100
h
FE
I
C
I
C
/ I
B
=
10
300
V
CE
=
10 V
T
a
=
75°C
25°C
−25°C
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
10
10
10
25°C
75°C
Forward current transfer ratio h
FE
1
10
250
200
150
100
50
0
0.01
1
T
a
=
75°C
25°C
0.1
−25°C
1 T
a
= −25°C
0.1
0.01
0.01
0.1
1
10
0.01
0.01
0.1
0.1
1
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
I
E
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
240
200
160
120
80
40
0
−1
V
CB
=
10 V
T
a
=
25°C
12
10
8
6
4
2
0
C
ob
V
CB
Collector-emitter voltage V
(Resistor between B and E)
CER
(V)
I
E
=
0
f
=
1 MHz
T
a
=
25°C
120
100
80
60
40
20
0
V
CER
R
BE
I
C
=
2 mA
T
a
=
25°C
Transition frequency f
T
(MHz)
−10
−100
1
10
100
1
10
100
1000
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V )
Base-emitter resistance R
BE
(kΩ)
2
SJC00227DED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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