5SMY12N4500 datasheet, PDF - EEWORLD Datasheet

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5SMY12N4500: DescriptionInsulated Gate Bipolar Transistor, 55A I(C), 4500V V(BR)CES, N-Channel, 14.30 X 14.30 MM, DIE-1; CategoryDiscrete semiconductor The transistor; File Size606KB，4 Pages; ManufacturerABB; Websitehttp://www.abb.com/

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5SMY12N4500 Overview

Insulated Gate Bipolar Transistor, 55A I(C), 4500V V(BR)CES, N-Channel, 14.30 X 14.30 MM, DIE-1

5SMY12N4500 Parametric

Parameter Name	Attribute value
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XUUC-N1
Contacts	1
Reach Compliance Code	compli
Maximum collector current (IC)	55 A
Collector-emitter maximum voltage	4500 V
Configuration	SINGLE
JESD-30 code	S-XUUC-N1
Number of components	1
Number of terminals	1
Maximum operating temperature	125 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	2460 ns
Nominal on time (ton)	900 ns
Base Number Matches	1

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IGBT and Diode dies

ABB Semiconductors

ABB IGBT and Diode dies from state-

of-the-art SPT

™

planar technology

platform.

Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs

ABB Semiconductor has a well established reputation in the

field of high power semiconductors for switching devices. This

is reflected in the most complete product portfolio by any

supplier of high power semiconductors. The portfolio covers a

wide range of Bipolar and BiMOS devices such as Thyristors,

Diodes, GTOs, IGBTs and IGCTs with operation voltages of up

to 8.5 kV for the Industrial, Traction and Energy Management

markets.

ABB Semiconductor IGBT (Insulated Gate Bipolar Transistor)

high power modules (HiPak

™

) and press-packs (StakPak

™

)

are manufactured using SPT

™

chipsets developed and pro-

duced at our own facilities in Switzerland. The goal is to make

the modules and press-packs from ABB Best-in-Class in terms

of switching performance, ruggedness and reliability. The

SPT

™

chipsets are available for manufacturers of semicon-

ductor power device packages targeting demanding appli-

cations in the field of power electronics.

1200 V IGBT modules are widely used in household equipment

and in motor drives for renewables (solar & wind), battery

back-ups systems (UPS) and electrical vehicles. The various

requirements in package design and output power is suppor-

ted by the broad number of chipsets for 1200 V offered by

ABB Semiconductors (see table).

1700 V IGBT modules are used in various low and medium

voltage drives (LVD/MVD) mainly for industrial applications and

traction applications. The range of modules serving these

applications is huge. ABB Semiconductors is serving both the

industrial market and the traction market with the largest single

switch; the 1.7 kV / 3.6 kA module rated at 150°C suitable for

instance for high power induction heating and smelting.

Smaller industrial packages are also common and ABB is

serving this part of the 1.7 kV market with planar technology

IGBT and Diode chipsets.

Higher voltage IGBT and Diode chipsets are mainly used in

very high power applications requiring expertise in packaging

and handling of the chips prior to packaging. ABB Semicon-

ductors offer chipsets in the range from 2.5 kV to 6.5 kV in

limited volumes for customer specific applications.

Power and productivity

for a better world

™

5SMY12N4500 Related Products

	5SMY12N4500	5SMY12L4500	5SMY12M3300	5SMX76K1701
Description	Insulated Gate Bipolar Transistor, 55A I(C), 4500V V(BR)CES, N-Channel, 14.30 X 14.30 MM, DIE-1	Insulated Gate Bipolar Transistor, 42A I(C), 4500V V(BR)CES, N-Channel, 12.80 X 12.80 MM, DIE-1	Insulated Gate Bipolar Transistor, 62.5A I(C), 3300V V(BR)CES, N-Channel, 13.60 X 13.60 MM, DIE-1	Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, 11.90 X 11.90 MM, DIE-1
Parts packaging code	DIE	DIE	DIE	DIE
package instruction	UNCASED CHIP, S-XUUC-N1	UNCASED CHIP, S-XUUC-N1	UNCASED CHIP, S-XUUC-N1	UNCASED CHIP, S-XUUC-N1
Contacts	1	1	1	1
Reach Compliance Code	compli	compliant	compliant	compliant
Maximum collector current (IC)	55 A	42 A	62.5 A	75 A
Collector-emitter maximum voltage	4500 V	4500 V	3300 V	1700 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
JESD-30 code	S-XUUC-N1	S-XUUC-N1	S-XUUC-N1	S-XUUC-N1
Number of components	1	1	1	1
Number of terminals	1	1	1	1
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	SQUARE	SQUARE	SQUARE
Package form	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
surface mount	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER	UPPER	UPPER
transistor applications	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maximum operating temperature	125 °C	125 °C	125 °C	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-
Base Number Matches	1	1	1	-
Maker	-	ABB	ABB	ABB

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