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PN4249D26Z

Description
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
CategoryDiscrete semiconductor    The transistor   
File Size293KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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PN4249D26Z Overview

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,

PN4249D26Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.6 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
PN4249
Discrete POWER & Signal
Technologies
PN4249
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
60
60
5.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θ
JA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
PN4249
625
5.0
83.3
200
Units
mW
mW/
°
C
°
C/W
°C/W
©
1997 Fairchild Semiconductor Corporation

PN4249D26Z Related Products

PN4249D26Z PN4249_D75Z PN4249_D26Z PN4249_D74Z
Description Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, trans GP pnp 60v 500ma TO-92 trans GP pnp 60v 500ma TO-92 trans GP pnp 60v 500ma TO-92
Standard Package - 2,000 2,000 2,000
Category - Discrete Semiconductor Products Discrete Semiconductor Products Discrete Semiconductor Products
Family - Transistors (BJT) - Single Transistors (BJT) - Single Transistors (BJT) - Single
Packaging - Tape & Box (TB) Tape & Reel (TR) Tape & Box (TB)
Transistor Type - PNP PNP PNP
Current - Collector (Ic) (Max) - 500mA 500mA 500mA
Voltage - Collector Emitter Breakdown (Max) - 60V 60V 60V
Vce Saturation (Max) @ Ib, Ic - 250mV @ 500µA, 10mA 250mV @ 500µA, 10mA 250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce - 100 @ 100µA, 5V 100 @ 100µA, 5V 100 @ 100µA, 5V
Power - Max - 625mW 625mW 625mW
Mounting Type - Through Hole Through Hole Through Hole
Package / Case - TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package - TO-92-3 TO-92-3 TO-92-3
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