5SMX12N4506 datasheet, PDF - EEWORLD Datasheet

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5SMX12N4506: DescriptionInsulated Gate Bipolar Transistor, 40A I(C), 4500V V(BR)CES, N-Channel, 14.30 X 14.30 MM, DIE-2; CategoryDiscrete semiconductor The transistor; File Size62KB，5 Pages; ManufacturerABB; Websitehttp://www.abb.com/

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5SMX12N4506 Overview

Insulated Gate Bipolar Transistor, 40A I(C), 4500V V(BR)CES, N-Channel, 14.30 X 14.30 MM, DIE-2

5SMX12N4506 Parametric

Parameter Name	Attribute value
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XUUC-N2
Contacts	2
Reach Compliance Code	compli
Maximum collector current (IC)	40 A
Collector-emitter maximum voltage	4500 V
Configuration	SINGLE
JESD-30 code	S-XUUC-N2
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	1170 ns
Nominal on time (ton)	260 ns
Base Number Matches	1

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4500 V

40 A

IGBT-Die

5SMX 12N4506

Die size: 14.3 x 14.3 mm

Doc. No. 5SYA1624-03 Sep 05

•

Low loss, rugged SPT technology

Smooth switching for good EMC

Large bondable emitter area

Passivation: SIPOS and Silicon Nitride plus Polyimide

Maximum rated values

Parameter

Collector-emitter voltage

DC collector current

Peak collector current

Gate-emitter voltage

IGBT short circuit SOA

Junction temperature

Symbol Conditions

CES

GES

psc

= 3400 V, V

CEM

≤

4500 V

≤

15 V, T

≤

125 °C

Limited by T

vjmax

= 0 V

min

max

4500

Unit

µs

°C

-20

-40

125

Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

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