Ordering number:ENN949B
NPN Triple Diffused Planar Silicon Transistor
2SC3038
400V/4A Switching Regulator Applications
Features
· High breakdown voltage (V
CBO
≥500V).
· Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm
2010C
[2SC3038]
10.2
3.6
5.1
4.5
1.3
2.7
18.0
5.6
1.2
0.8
14.0
15.1
6.3
0.4
1
2
3
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
PW≤300μs, Duty Cycle≤10%
2.55
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220AB
Conditions
2.7
Ratings
500
400
7
4
8
1.5
1.75
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Tc=25˚C
40
150
–55 to +150
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=400V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.4A
VCE=5V, IC=2A
15*
8
Conditions
Ratings
min
typ
max
10
10
50*
Unit
µA
µA
Continued on next page.
* : The h
FE
1 of the 2SC3038 is classified as follows. When specifying the h
FE
1 rank, specify two ranks or more in principle.
Rank
hFE
L
15 to 30
M
20 to 40
N
30 to 50
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21004TN (KT)/N3098HA (KT)/4147KI/3095MY No.949–1/4
2SC3038
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
fT
Cob
IC=2A, IB=0.4A
IC=2A, IB=0.4A
VCE=10V, IC=0.4A
VCB=10V, f=1MHz
500
400
7
400
400
450
1.0
2.5
1.0
20
40
Conditions
Ratings
min
typ
max
1.0
1.5
Unit
V
V
MHz
pF
V
V
V
V
V
V
µs
µs
µs
V(BR)CBO IC=1mA, IE=0
V(BR)CEO IC=5mA, RBE=∞
V(BR)EBO IE=1mA, IC=0
VCEO(sus) IC=4A, IB=0.8A, L=50µH
VCEX(sus)1
IC=4A, IB1=0.8A, L=200µH, IB2=–0.8A, clamped
VCEX(sus)2
ton
tstg
tf
IC=0.75A, IB1=0.15A, L=200µH, IB2=–0.15A,
clamped
IC=3A, IB1=0.6A, IB2=–0.6A, RL=66.6
Ω,
VCC=200V
IC=3A, IB1=0.6A, IB2=–0.6A, RL=66.6
Ω,
VCC=200V
IC=3A, IB1=0.6A, IB2=–0.6A, RL=66.6
Ω,
VCC=200V
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
VR
10
1
IB1
IB2
OUTPUT
RL
+
470μF
VCC=200V
50Ω
+
100μF
VBE= --5V
5IB1= --5IB2= IC
2.0
IC -- VCE
A
100m
80mA
5
IC -- VCE
1A
800mA
600mA
Collector Current, IC – A
60mA
Collector Current, IC – A
1.6
4
400mA
3
1.2
40mA
200mA
2
0.8
20mA
10mA
100mA
0.4
1
0
0
IB=0
2
4
6
8
10
ITR05226
0
0
2
4
IB=0
6
8
10
ITR05227
Collector-to-Emitter Voltage, VCE – V
5
Collector-to-Emitter Voltage, VCE – V
1000
IC -- VBE
VCE=5V
Pulse
hFE -- IC
VCE=5V
Pulse
5
3
Collector Current, IC – A
4
DC Current Gain, hFE
2
100
3
Ta=120°C
5
3
2
10
5
25
°C
--40
°
C
Ta=
120
°
C
25
°
C
2
1
--40
°
C
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
3
2
3
Base-to-Emitter Voltage, VBE – V
5 7 0.01
2 3
5 7 0.1
2 3
5 7 1.0
2
3
ITR05228
Collector Current, IC – A
5 7 10
ITR05229
No.949–2/4
2SC3038
100
5
VCE(sat) -- IC
IC / IB=5
Pulse
100
5
VBE(sat) -- IC
IC / IB=5
Pulse
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
3
2
10
5
3
2
1.0
5
3
2
0.1
5
3
2
3
3
2
10
5
3
2
25
°C
1.0
5
3
2
0.1
2 3
5
0.01 2 3
5
2 3
5
2 3
5
Ta= --40°C
C
25
°
120
°
C
Ta=120°C
°
C
--40
0.1
2 3
5
1.0
2 3
10
ITR05230
5
5
0.01
2 3
5
0.1
1.0
Collector Current, IC – A
10
7
Collector Current, IC – A
60
10
ITR05231
SW Time -- IC
tstg
PC -- Ta
Switching Time, SW time –
μs
5
3
2
1.0
7
5
3
2
0.1
7
5
3
5
7
0.1
2
3
Collector Dissipation, P
C
– W
R load
IC=5IB1= --5IB2
VCC=200V
50
40
30
tf
20
ton
10
0
5
Collector Current, IC – A
7 1.0
2
3
5
10
ITR05232
2
10
8
7
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR05233
2
10
5
3
2
1.0
5
3
2
0.1
5
3
2
8
4
Forward Bias A S O
ICP=8A
<50
μs
o
Di
pera
Li sipa
tio
n
mi ti
ted on
Reverse Bias A S O
Collector Current, IC – A
Collector Current, IC – A
IC=4A
DC
5
3
2
1.0
5
3
2
0.1
5
3
2
Tc=25°C
L=200μH
IC= --5IB2
Test Circuit
IB1
IB2
TUT
IC
IB2= --0.8A
Const
(at IC
≥4A)
10
s
0
μ
1m
s
10m
s
S/
BL
im
L
100Ω
--5V
2
3
5
7
2
3
VCC=20V
5
7 100
2
450
3
5
7 1000
ITR05235
d
ite
Tc=25°C
Single pulse
2
3
5
7
10
2
3
5
7 100
2
3 4 5
Collector-to-Emitter Voltage, VCE – V
7 1000
ITR05234
10
Collector-to-Emitter Voltage, VCE – V
No.949–3/4
2SC3038
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2004. Specifications and information herein are subject
to change without notice.
PS No.949–4/4
Talking
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