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2SC3990-M

Description
1.2A, 18V, NPN, Si, POWER TRANSISTOR, TO-3PBL, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size53KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SC3990-M Overview

1.2A, 18V, NPN, Si, POWER TRANSISTOR, TO-3PBL, 3 PIN

2SC3990-M Parametric

Parameter NameAttribute value
Objectid1999575024
Parts packaging codeTO-3PBL
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
YTEOL0
Other featuresHIGH RELIABILITY
Maximum collector current (IC)1.2 A
Collector-emitter maximum voltage18 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Ordering number:ENN2234C
NPN Triple Diffused Planar Silicon Transistor
2SC3990
500V/35A Switching Regulator Applications
Features
· High breakdown voltage, high reliability.
· Fast switching speed.
· Wide ASO.
· Adoption of MBIT process.
Package Dimensions
unit:mm
2048B
[2SC3990]
6.0
20.0
3.3
5.0
26.0
2.0
3.4
20.7
1.2
2.0
1.0
0.6
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
5.45
5.45
2.8
1
2
3
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
Ratings
800
500
7
35
Unit
V
V
V
A
A
A
W
PW≤300μs, duty cycle≤10%
Tc=25˚C
50
12
250
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=500V, IE=0
VEB=5V, IC=0
VCE=5V, IC=3.2A
VCE=5V, IC=16A
15*
8
Conditions
Ratings
min
typ
max
10
10
50*
Unit
µA
µA
* : The 2SC3990 is classified by 3.2A h
FE
as follows :
Rank
hFE
L
15 to 30
M
20 to 40
N
30 to 50
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82903TN (KT)/N3098HA (KT)/90495MO/2247TA, TS 8-0265 No.2234–1/4

2SC3990-M Related Products

2SC3990-M 2SC3990L 2SC3990-L 2SC3990M 2SC3990-N 2SC3990N
Description 1.2A, 18V, NPN, Si, POWER TRANSISTOR, TO-3PBL, 3 PIN Power Bipolar Transistor, 1.2A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin, TO-3PBL, 3 PIN Power Bipolar Transistor, 1.2A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin, TO-3PBL, 3 PIN Power Bipolar Transistor, 1.2A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin, TO-3PBL, 3 PIN 1.2 A, 18 V, NPN, Si, POWER TRANSISTOR, TO-3PBL, 3 PIN Power Bipolar Transistor, 1.2A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin, TO-3PBL, 3 PIN
Parts packaging code TO-3PBL TO-247 TO-247 TO-247 TO-3PBL TO-247
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 2 2 2 3 2
Reach Compliance Code unknown unknow unknown unknown unknown unknow
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Maximum collector current (IC) 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A
Collector-emitter maximum voltage 18 V 18 V 18 V 18 V 18 V 18 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 15 15 20 30 30
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
Objectid 1999575024 - 1417094237 1417094241 1999575025 -
ECCN code - EAR99 EAR99 EAR99 - EAR99
Shell connection - ISOLATED ISOLATED ISOLATED - ISOLATED
JEDEC-95 code - TO-247 TO-247 TO-247 - TO-247
Maximum operating temperature - 150 °C 150 °C 150 °C - 150 °C
Maximum power consumption environment - 250 W 250 W 250 W - 250 W
Maximum power dissipation(Abs) - 250 W 250 W 250 W - 250 W

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