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BZD27C51PGS08

Description
DIODE 51 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, ROHS COMPLIANT, SMF, 2 PIN, Voltage Regulator Diode
CategoryDiscrete semiconductor    diode   
File Size85KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
Download Datasheet Parametric View All

BZD27C51PGS08 Overview

DIODE 51 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, ROHS COMPLIANT, SMF, 2 PIN, Voltage Regulator Diode

BZD27C51PGS08 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeDO-219AB
package instructionROHS COMPLIANT, SMF, 2 PIN
Contacts2
Reach Compliance Codeunknown
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
Sillicon planar zener diodes
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering: 260 °C/10 s
at terminals
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
17249
Mechanical Data
Case:
DO-219AB (SMF)
Weight:
approx. 15 mg
Packaging codes/options:
GS18/10 k per 13 " reel (8 mm tape), 10 k/box
GS08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
T
L
= 80 °C
T
A
= 25 °C
100 µs square pulse
2)
Non-repetitive peak pulse power
dissipation
10/1000
μs
waveform (BZD27-C7V5P to BZD27-C100P)
2)
10/1000
μs
waveform (BZD27-C110P to BZD27-C200P)
2)
Notes
1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
2)
T
J
= 25 °C prior to surge
Symbol
P
tot
P
tot
P
ZSM
P
RSM
P
RSM
Value
2.3
0.8
1)
300
150
100
Unit
W
W
W
W
W
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
1)
Thermal resistance junction to lead
Maximum junction temperature
Storage temperature range
Note
1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
Test condition
Symbol
R
thJA
R
thJL
T
j
T
S
Value
180
30
150
- 55 to + 150
Unit
K/W
K/W
°C
°C
Document Number 85810
Rev. 2.0, 23-Mar-10
For technical support, please contact:
DiodesSSP@vishay.com
www.vishay.com
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