This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD0592
(2SD592)
Silicon NPN epitaxial planar type
For low frequency amplification
Complementary to
2SB0621
(2SB621)
Features
Unit: mm
5.0
±0.2
5.1
±0.2
4.0
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
0.7
±0.1
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Emitter-base voltage (Collector open)
Peak collector current
Junction temperature
Storage temperature
Collector power dissipation
T
stg
–55 to +150
Electrical Characteristics
T
a
=
25
°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE2
V
CE(sat)
V
BE(sat)
C
ob
f
T
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30
25
5
1
V
V
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
+0.6
–0.2
Parameter
Symbol
Rating
Unit
V
2.3
±0.2
A
A
1
2 3
12.9
±0.5
Absolute Maximum Ratings
T
a
=
25
°C
0.7
±0.2
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
1.5
750
150
mW
°C
°C
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Conditions
Min
30
5
25
Typ
Max
Unit
V
V
V
µA
V
V
pF
MHz
/D
isc
Collector-base cutoff current (Emitter open)
on
Emitter-base voltage (Collector open)
tin
ue
di
I
C
=
10
µA,
I
E
=
0
I
C
=
2
mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
20
V, I
E
=
0
0.1
Collector-emitter saturation voltage
Base-emitter saturation voltage
Ma
int
en
an
Forward current transfer ratio
ce
h
FE1 *
V
CE
=
10
V, I
C
=
500
mA
V
CE
=
5
V, I
C
=
1
A
85
340
0.4
50
I
C
=
500
mA, I
B
=
50
mA
0.2
I
C
=
500
mA, I
B
=
50
mA
0.85
1.2
20
Transition frequency
Pl
Collector output capacitance
(Common base, input open circuited)
V
CB
=
10
V, I
E
=
0,
f =
1
MHz
V
CB
=
10
V, I
E
=
—50
mA, f =
200
MHz
200
Note)
1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7030
measuring methods for transistors.
2.
* : Rank classification
Rank
Q
R
S
h
FE1
85
to
170
120
to
240
170
to
340
Note) The part number in the parenthesis shows conventional part number.
Publication date: May
2006
SJC00344AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD0592
P
C
T
a
1.0
1.50
1.25
Collector current
I
C
(A)
1.00
0.75
0.50
0.25
I
C
V
CE
T
a
=
25°C
I
B
=
10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
1.2
1.0
Collector current
I
C
(A)
0.8
0.6
0.4
0.2
0
V
CE
=
10 V
T
a
=
25°C
I
C
I
B
Collector power dissipation
P
C
(W)
0.8
0.6
0.4
M
ain
Di
sc te
on na
tin nc
ue e/
d
0
0
40
80
120
160
0
0
2
4
6
8
10
0
Ambient temperature
T
a
(
°C
)
Collector-emitter voltage
V
CE
(V)
0.2
2
4
6
8
10
12
V
CE(sat)
I
C
10
Collector-emitter saturation voltage
V
CE(sat)
(V)
I
C
/ I
B
=
10
100
Forward current transfer ratio
1
10
T
a
=
75°C
25°C
0.1
−25°C
0.01
0.1
/D
200
isc
f
T
I
E
on
tin
ue
Collector current
I
C
(A)
di
0.001
0.01
0.1
1
10
0.01
0.01
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V
BE(sat)
I
C
h
FE
I
C
I
C
/
I
B
=
10
600
500
400
300
200
100
1
25°C
T
a
= −25°C
75°C
FE
Base current
I
B
(mA)
Base-emitter saturation voltage
V
BE(sat)
(V)
V
CE
=
10 V
T
a
=
75°C
25°C
−25°C
0.1
1
10
0
0.01
0.1
1
10
Collector current
I
C
(A)
Collector current
I
C
(A)
C
ob
V
CB
V
CER
R
BE
50
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
Transition frequency
f
T
(MHz)
140
120
100
80
60
40
20
0
−1
Ma
int
en
160
40
Collector-emitter voltage V
(Resistor between B and E)
CER
(V)
an
V
CB
=
10 V
180
T
a
=
25°C
I
E
=
0
f
=
1 MHz
T
a
=
25°C
120
100
80
60
40
20
ce
I
C
=
10 mA
T
a
=
25°C
30
10
Pl
0
20
−10
Emitter current
I
E
(mA)
−100
1
10
Collector-base voltage
V
CB
100
0
0.1
1
10
100
(V )
Base-emitter resistance
R
BE
(kΩ)
2
SJC00344AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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cy
on es
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co fo
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.jp rm
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/ ion
.
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int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
Embedded System
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