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2N5535

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size233KB,8 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric Compare View All

2N5535 Overview

Transistor

2N5535 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)20 A
ConfigurationSingle
Minimum DC current gain (hFE)30
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)50 W
surface mountNO
Nominal transition frequency (fT)150 MHz
Base Number Matches1

2N5535 Related Products

2N5535 2N5537
Description Transistor Transistor
Reach Compliance Code unknow unknow
Maximum collector current (IC) 20 A 20 A
Configuration Single Single
Minimum DC current gain (hFE) 30 30
Maximum operating temperature 175 °C 175 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 50 W 50 W
surface mount NO NO

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Index Files: 4  1897  1125  897  1707  1  39  23  19  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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