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NE76084S

Description
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size146KB,4 Pages
ManufacturerCalifornia Eastern Labs
Websitehttp://www.cel.com/
Download Datasheet Parametric Compare View All

NE76084S Overview

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

NE76084S Parametric

Parameter NameAttribute value
MakerCalifornia Eastern Labs
package instructionDISK BUTTON, O-CRDB-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
ConfigurationSINGLE
Minimum drain-source breakdown voltage5 V
Maximum drain current (ID)0.05 A
FET technologyMETAL SEMICONDUCTOR
highest frequency bandKU BAND
JESD-30 codeO-CRDB-F4
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)8 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE

NE76084S Related Products

NE76084S NE76084-T2 NE76084-T1
Description RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
Maker California Eastern Labs California Eastern Labs California Eastern Labs
package instruction DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 5 V 5 V 5 V
Maximum drain current (ID) 0.05 A 0.05 A 0.05 A
FET technology METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR
highest frequency band KU BAND KU BAND KU BAND
JESD-30 code O-CRDB-F4 O-CRDB-F4 O-CRDB-F4
Number of components 1 1 1
Number of terminals 4 4 4
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Minimum power gain (Gp) 8 dB 8 dB 8 dB
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location RADIAL RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
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