NE76084-2.4T1 datasheet, PDF - EEWORLD Datasheet

NE76084-2.4T1: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size171KB，12 Pages; ManufacturerNEC Electronics

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NE76084-2.4T1 Overview

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

Parameter Name	Attribute value
Maker	NEC Electronics
package instruction	DISK BUTTON, O-CRDB-F4
Reach Compliance Code	unknown
Other features	LOW NOISE
Configuration	SINGLE
Minimum drain-source breakdown voltage	5 V
FET technology	METAL SEMICONDUCTOR
highest frequency band	KU BAND
JESD-30 code	O-CRDB-F4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	8 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

	NE76084-2.4T1	NE76084-2.4SL	NE76084-2.4T1A
Description	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
Maker	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4
Reach Compliance Code	unknown	unknown	unknown
Other features	LOW NOISE	LOW NOISE	LOW NOISE
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	5 V	5 V	5 V
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
highest frequency band	KU BAND	KU BAND	KU BAND
JESD-30 code	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4
Number of components	1	1	1
Number of terminals	4	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	8 dB	8 dB	8 dB
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT
Terminal location	RADIAL	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE

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