DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG250134
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (800 mW)
3-PIN POWER MINIMOLD (34 PACKAGE)
FEATURES
• This product is suitable for medium output power (800 mW) amplification
P
O
= 29 dBm TYP. @ V
CE
= 3.6 V, P
in
= 15 dBm, f = 460 MHz
P
O
= 29 dBm TYP. @ V
CE
= 3.6 V, P
in
= 20 dBm, f = 900 MHz
• MSG (Maximum Stable Gain) = 23 dB TYP., @ V
CE
= 3.6 V, Ic = 100 mA, f = 460 MHz
• Using UHS2-HV process (SiGe technology), V
CBO
(ABSOLUTE MAXIMUM RATINGS) = 20 V
• 3-pin power minimold (34 package)
ORDERING INFORMATION
Part Number
NESG250134
NESG250134-T1
Quantity
25 pcs (Non reel)
1 kpcs/reel
Supplying Form
• 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
9.2
2.8
500
1.5
150
−65
to +150
Unit
V
V
V
mA
W
°C
°C
T
j
T
stg
Note
Mounted on 34.2 cm
×
0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10422EJ02V0DS (2nd edition)
Date Published July 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2003, 2004
NESG250134
THERMAL RESISTANCE (T
A
= +25°C)
Parameter
Termal Resistance from Junction to
Ambient
Note
Symbol
Rth
j-a
Ratings
80
Unit
°C/W
Note
Mounted on 34.2 cm
×
0.8 mm (t) glass epoxy PWB
2
RECOMMENDED OPERATING RANGE (T
A
= +25°C)
Parameter
Collector to Emitter Voltage
Collector Current
Input Power
Note
Symbol
V
CE
I
C
P
in
MIN.
−
−
−
TYP.
3.6
400
12
MAX.
4.5
500
17
Unit
V
mA
dBm
Note
Input power under conditions of V
CE
≤
4.5 V, f = 460 MHz
2
Data Sheet PU10422EJ02V0DS
NESG250134
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.6
f = 1 MHz
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2
4
6
8
10
2.0
Total Power Dissipation P
tot
(mW)
1.6
1.5
Mounted on Glass epoxy PWB
(34.2 cm
2
×
0.8 mm (t) )
1.2
0.8
Nature Neglect
0.4
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1 000
100
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1 000
100
Collector Current I
C
(mA)
V
CE
= 3 V
V
CE
= 4 V
10
1
0.1
0.01
0.001
10
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
500
10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
200
2 mA
Collector Current I
C
(mA)
400
300
100
I
B
= 1 mA
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Remark
The graphs indicate nominal characteristics.
4
Data Sheet PU10422EJ02V0DS
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