DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP60N03KUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP60N03KUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP60N03KUG
PACKAGE
TO-263 (MP-25ZK)
FEATURES
•
Channel temperature 175 degree rating
•
Super low on-state resistance
R
DS(on)
= 4.8 mΩ MAX. (V
GS
= 10 V, I
D
= 30 A)
•
Low C
iss
: C
iss
= 3500 pF TYP.
(TO-263)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±20
±60
±240
1.8
88
175
−55
to +175
33
109
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I
AR
E
AR
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
T
ch
<
150°C, V
DD
= 15 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
1.70
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16860EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
NP60N03KUG
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
µ
A
V
DS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 15 V, I
D
= 30 A
V
GS
= 10 V
R
G
= 0
Ω
MIN.
TYP.
MAX.
1
±100
UNIT
µ
A
nA
V
S
2.0
10
3.0
21
3.6
3500
400
260
32
52
73
12
4.0
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
4.8
5300
600
470
70
130
150
30
93
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DD
= 24 V
V
GS
= 10 V
I
D
= 60 A
I
F
= 60 A, V
GS
= 0 V
I
F
= 60 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
62
14
21
0.9
38
41
V
F(S-D)
t
rr
Q
rr
1.5
V
ns
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D16860EJ1V0DS
NP60N03KUG
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
R
DS(on)
Limited
(at V
GS
= 10 V)
I
D(pulse)
= 240 A
PW = 100
µs
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
I
D
- Drain Current - A
100
10
I
D(DC)
= 60 A
DC
1 ms
1
T
C
= 25°C
Single pulse
10 ms
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
r
th(t)
- Transient Thermal Resistance -
°C/W
R
th(ch-A)
= 83.3°C/W
10
1
R
th(ch-C)
= 1.70°C/W
0.1
Single pulse
0.01
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16860EJ1V0DS
3
NP60N03KUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
Pulsed
250
I
D
- Drain Current - A
200
150
100
50
0
0
0.2
0.4
0.6
0.8
1
1.2
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(th)
- Gate to Source Threshold Voltage - V
| y
fs
| - Forward Transfer Admittance - S
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
-100
V
DS
= V
GS
I
D
= 250
µA
Pulsed
-50
0
50
100
150
200
V
GS
= 10 V
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
1
0.1
0.01
0.001
0
1
2
3
4
5
6
T
A
=
−50°C
25°C
125°C
175°C
V
DS
= 10 V
Pulsed
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
T
A
=
−50°C
25°C
125°C
175°C
V
DS
= 10 V
Pulsed
1
0.1
1
10
100
1000
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
T
ch
- Channel Temperature -
°C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
9
8
7
6
5
4
3
2
1
0
1
10
100
1000
I
D
- Drain Current - A
Pulsed
V
GS
= 10 V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
10
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10 12 14 16 18 20
V
GS
- Gate to Source Voltage - V
Pulsed
I
D
= 48 A
30 A
12 A
4
Data Sheet D16860EJ1V0DS
NP60N03KUG
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
C
iss
, C
oss
, C
rss
- Capacitance - pF
7
6
5
4
3
2
1
0
-100
V
GS
= 10 V
I
D
= 30 A
Pulsed
-50
0
50
100
150
200
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C
iss
1000
C
oss
V
GS
= 0 V
f = 1 MHz
100
0.1
1
10
100
C
rss
T
ch
- Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DS
- Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
0
0
10
20
V
DS
I
D
= 60 A
Pulsed
40
50
60
70
2
0
30
Q
G
- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
V
GS
4
V
DD
= 24 V
15 V
6V
10
8
6
V
GS
- Gate to Source Voltage - V
100
t
d(off)
t
r
t
d(on)
10
t
f
V
DD
= 15 V
V
GS
= 10 V
R
G
= 0
Ω
0.1
1
10
100
1
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
100
V
GS
= 10 V
10
1
0.1
Pulsed
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
100
0V
V
GS
= 0 V
di/dt = 100 A/µs
10
0.1
1
10
100
I
F
- Diode Forward Current - A
Data Sheet D16860EJ1V0DS
5
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